2SK2646-01
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3.19 Ohms; ID +/-4A; TO-220AB; PD 80W; VGS +/-3

From Fuji Semiconductor

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10 x 4.5 x 15 mm
Forward Diode Voltage1.5 V
Height15 mm
Maximum Continuous Drain Current±4 A
Maximum Drain Source Resistance4 mΩ
Maximum Gate Source Voltage±35 V
Maximum Power Dissipation80 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-220AB
Pin Count3
Typical Input Capacitance @ Vds450 pF @ 25 V
Typical TurnOff Delay Time50 ns
Width4.5 mm

External links