2N5039-1
Si NPN Power BJT

From General Semiconductor Industries, Inc.

StatusDiscontinued
@I(C) (A) (Test Condition)10
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)140
I(C) Abs.(A) Collector Current20
I(CBO) Max. (A)50m
MilitaryN
PackageTO-3
V(BR)CBO (V)120
V(BR)CEO (V)75
f(T) Min. (Hz) Transition Freq60M
h(FE) Max. Current gain.100
h(FE) Min. Static Current Gain20
t(d) Max. (s) Delay time.500n
t(f) Max. (s) Fall time.500n
t(r) Max. (s) Rise time500n
t(s) Max. (s) Storage time.1.5u

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