BSM150GB160D Half Bridge IGBT Power Module
From Infineon Technologies
| @I(C) (A) (Test Condition) | 150 |
| @V(CE) (V) (Test Condition) | 20 |
| @V(GE) (Test Condition) | 15 |
| Absolute Max. Power Diss. (W) | 1.25k |
| Circuits Per Package | 1 |
| I(C) Abs.(A) Collector Current | 200 |
| Package | MODULE-var |
| V(BR)CES (V) | 1.6k |
| V(BR)GES (V) | 20 |
| V(CE)sat Max.(V) | 3.7 |
| V(GE)th Max. (V) | 6.2 |
| g(fe) Min. (S) Trans. admitt. | 54 |
| t(d)off Max. (s) Off time | 2.5u |
| t(f) Max. (s) Fall time. | 150n |
| t(r) Max. (s) Rise time | 300n |
| td(on) Max (s) On time delay | 850n |
