BSS215PH6327
1500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Infineon Technologies AG

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)1.5 A
Drain-source On Resistance-Max0.1500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)128 pF
Mfr Package DescriptionGREEN, PLASTIC PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

External links