FD400R33KF2C-K
660 A, 3300 V, N-CHANNEL IGBT

From Infineon Technologies AG

StatusACTIVE
Case ConnectionISOLATED
Channel TypeN-CHANNEL
Collector Current-Max (IC)660 A
Collector-emitter Voltage-Max3300 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Mfr Package DescriptionMODULE-7
Number of Elements1
Number of Terminals5
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Terminal FinishMATTE TIN
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
Transistor TypeINSULATED GATE BIPOLAR
Turn-off Time-Nom (toff)1900 ns
Turn-on Time-Nom (ton)480 ns

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