IFS150B12N3T4_B31 1200 V, N-CHANNEL IGBT
From Infineon Technologies AG
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Collector-emitter Voltage-Max | 1200 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR |
| Mfr Package Description | MODULE-41 |
| Number of Elements | 6 |
| Number of Terminals | 41 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
| Turn-off Time-Nom (toff) | 605 ns |
| Turn-on Time-Nom (ton) | 165 ns |
