IRF1324S-7P
160 A, 24 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)230 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min24 V
Drain Current-Max (ID)160 A
Drain-source On Resistance-Max1.00E-3 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionD2PAK-7
Number of Elements1
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)1640 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links