IRF640NL
MOSFET N-CH 200V 18A TO-262

From International Rectifier

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C18A (Tc)
DatasheetsIRF640N
Drain to Source Voltage (Vdss)200V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs67nC @ 10V
Input Capacitance (Ciss) @ Vds1160pF @ 25V
Mounting TypeThrough Hole
Other Names*IRF640NL
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
PackagingTube
Power - Max150W
Product PhotosTO-262-3 Long Leads
Rds On (Max) @ Id, Vgs150 mOhm @ 11A, 10V
SeriesHEXFET®
Standard Package50
Supplier Device PackageTO-262
Vgs(th) (Max) @ Id4V @ 250µA

External links