IXTH1N200P3
MOSFET N-CH 2000V 1A TO-247

From IXYS

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C1A (Tc)
DatasheetsIXTx1N200P3(HV)
Drain to Source Voltage (Vdss)2000V (2kV)
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs23.5nC @ 10V
Input Capacitance (Ciss) @ Vds646pF @ 25V
Mounting TypeThrough Hole
Online CatalogN-Channel Standard FETs
Package / CaseTO-247-3
PackagingTube
Power - Max125W
Rds On (Max) @ Id, Vgs40 Ohm @ 500mA, 10V
Series-
Standard Package30
Supplier Device PackageTO-247 (IXTH)
Vgs(th) (Max) @ Id4V @ 250µA

External links