2N3882 P-Channel Enhancement MOSFET
From Various
| @(VDS) (V) (Test Condition) | 15 |
| @Freq. (Hz) (Test Condition) | 140k |
| @I(D) (A) (Test Condition) | 1.0m |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 15 |
| @V(GS) (V) (Test Condition) | 20 |
| Absolute Max. Power Diss. (W) | 200m |
| C(iss) Max. (F) | 3.0p |
| I(D) Abs. Drain Current (A) | 30m |
| I(DSS) Max. (A) | 25n |
| I(GSS) Max. (A) | 100p |
| Military | N |
| Package | TO-72 |
| V(BR)DSS (V) | 30 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 3.0 |
| V(GS)th Min. (V) | .70 |
| g(fs) Max, (S) Trans. conduct, | 2.5m |
| g(fs) Min. (S) Trans. conduct. | 1.0m |
