IRFD9220PBF MOSFET, Power; P-Ch; VDSS -200V; RDS(ON) 1.5 Ohms; ID -0.56A; HD-1; PD 1W; VGS +/-20V
From Vishay PCS
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Dimensions | 6.29 x 5 x 3.37 mm |
| Forward Diode Voltage | -6.3 V |
| Forward Transconductance | 0.55 S |
| Height | 3.37 mm |
| Length | 6.29 mm |
| Maximum Continuous Drain Current | -0.36 A |
| Maximum Drain Source Resistance | 1.5 Ω |
| Maximum Drain Source Voltage | -200 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | HVMDIP |
| Pin Count | 4 |
| Typical Gate Charge @ Vgs | Maximum of 15 nC @ -10 V |
| Typical Input Capacitance @ Vds | 340 pF @ -25 V |
| Typical Turn On Delay Time | 8.8 ns |
| Typical TurnOff Delay Time | 7.3 ns |
| Width | 5 mm |
