ISL9R860P2, ISL9R860S3ST 8 A, 600 V, STEALTHTM Diode Features * Stealth Recovery trr = 28 ns (@ IF = 8 A) * Max Forward Voltage, VF = 2.4 V (@ TC = 25C) * 600 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * SMPS FWD * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode Description The ISL9R860P2, ISL9R860S3ST is a STEALTHTM diode optimized for low loss performance in high frequency hard switched applications. The STEALTHTM family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTHTM diode with an SMPS I

ISL9R860P2, ISL9R860S3ST 8 A, 600 V, STEALTHTM Diode Features * Stealth Recovery trr = 28 ns (@ IF = 8 A) * Max Forward Voltage, VF = 2.4 V (@ TC = 25C) * 600 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * SMPS FWD * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode Description The ISL9R860P2, ISL9R860S3ST is a STEALTHTM diode optimized for low loss performance in high frequency hard switched applications. The STEALTHTM family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTHTM diode with an SMPS I

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ISL9R860P2, ISL9R860S3ST 8 A, 600 V, STEALTHTM Diode Features * Stealth Recovery trr = 28 ns (@ IF = 8 A) * Max Forward Voltage, VF = 2.4 V (@ TC = 25C) * 600 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * SMPS FWD * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode Description The ISL9R860P2, ISL9R860S3ST is a STEALTHTM diode optimized for low loss performance in high frequency hard switched applications. The STEALTHTM family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and shor

ISL9R860P2, ISL9R860S3ST Features * Stealth Recovery trr = 28 ns (@ IF = 8 A) * Max Forward Voltage, VF = 2.4 V (@ TC = 25C) * 600 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD 8 A, 600 V, StealthTM Diode The ISL9R860P2, ISL9R860S3ST is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Cons

ISL9R860P2, ISL9R860S3ST 8A, 600V StealthTM Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Soft Recovery . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49409. * Fast Recovery . . . . . . . . . . . . . . . . . .

ISL9R860P2 Data Sheet May 2001 File Number 4911.2 8A, 600V StealthTM Diode Features itle UF7 3P The ISL9R860P2 is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 F76 D3 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V bA

ISL9R860P2, ISL9R860S3ST Features * Stealth Recovery trr = 28 ns (@ IF = 8 A) * Max Forward Voltage, VF = 2.4 V (@ TC = 25C) * 600 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode 8 A, 600 V, STEALTHTM Diode The ISL9R860P2, ISL9R860S3ST is a STEALTHTM diode optimized for low loss performance in high frequency hard switched applications. The STEALTHTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber

ISL9R860P2, ISL9R860S2, ISL9R860S3ST 8A, 600V StealthTM Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Soft Recovery . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 * Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns * Operating Temperature . . . . . . . . . . . . . . . 175oC * Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber c

ISL9R860P2, ISL9R860S2, ISL9R860S3S 8A, 600V StealthTM Diode General Description Features * Soft Recovery . . . . . . . . . . . . . . . . . . .t b / ta > 2.5 The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns * Operating Temperature . . . . . . . . . . . . . . . 175 o C * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . 600V This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I RRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ISL9R860P2, ISL9R860S3ST 8 A, 600 V, STEALTHTM Diode Features * Stealth Recovery trr = 28 ns (@ IF = 8 A) * Max Forward Voltage, VF = 2.4 V (@ TC = 25C) * 600 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * SMPS FWD * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode Description The ISL9R860P2, ISL9R860S3ST is a STEALTHTM diode optimized for low loss performance in high frequency hard switched applications. The STEALTHTM family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and shor

ISL9R860P2, ISL9R860S2, ISL9R860S3ST 8A, 600V StealthTM Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Soft Recovery . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. * Avalanche Energy Rated * Fast Recovery . . . . . . . . . . . . . . . . . .

ISL9R860P2 Data Sheet [ /Title (ISL9R 860P2) /Subjec t (8A, 600V Stealth TM Diode) /Autho r () /Keyw ords (8A, 600V Stealth TM Diode, Intersil Corpor ation, semico nducto r, to220ac) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO utlines /DOC March 2001 File Number 4911.2 8A, 600V StealthTM Diode Features The ISL9R860P2 is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . trr < 25ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V This device is intended for use as a free wheeling or boost diode in power supplies and other power switching application

ISL9R860P2, ISL9R860S2, ISL9R860S3S 8A, 600V StealthTM Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Soft Recovery. . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. * Avalanche Energy Rated * Fast Recovery . . . . . . . . . . . . . . . . . .

ISL9R860P2, ISL9R860S2, ISL9R860S3S 8A, 600V StealthTM Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Soft Recovery. . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. * Avalanche Energy Rated Formerly developmental type TA49409. * Snubber Diode

ISL9R860P2 TM Data Sheet November 2000 File Number 4911.1 8A, 600V StealthTM Diode Features The ISL9R860P2 is a Stealth diode optimized for low loss performance in high frequency applications. The Stealth family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. * Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . trr < 25ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. * Avala