MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage * * * VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction These are Pb-Free Devices www.onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS NPN BASE 1 BASE 1 EMITTER 3 MJH11018 MJH11020 MJH11022 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Collector-Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Emitter-Base Voltage VEB 5.0 Vdc

MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage * * * VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction Pb-Free Packages are Available* http://onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS NPN BASE 1 BASE 1 EMITTER 3 MJH11018 MJH11020 MJH11022 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Collector-Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Emitter-Base Voltage VE

MPSU04 MPS-U04 3-1044 MJH10012 MJH10012 3-596 MPSU05 MPS-U05 3-1048 MJH11017 MJH11017 3-1034 MPSU06 MPS-U06 3-1048 MJH11018 MJH11018 3-1034 MPSU07 MPS-U07 3-1050 MJH11019 MJH11019 3-1034 MPSU10 MPS-U10 3-1052 MJH11020 MJH11020 3-1034 MPSU11 MPS-U10 3-1052 MJH11021 MJH11021 3-1034 MPSU12 MPS-U45 3-1055 MJH11022 MJH11022 3-1034 MPSU45 MPS-U45 3-1055 MJH12004 MJH12004 3-644 MPSU5i MPS-U51 3-1058 MJH12005 MJH12005 _ MPSUS1A MPS-U514 3-1058 MJH13090 MJH13030 3-688 MPSU52 MPS-U52 3-1060 MJH13091 MJH16010 3-758 MPSUS55 MPS-U55 3-1062 MJH16002 MJH16002 3-976 MPSUS56 MPS-U56 3-1062 MJH16002A MJH16002A 3-734 MPSU57 MPS-U57 3-1064 MJH16004 MJH16004 3-976 MPSU60 MPS-U60 3-1066 MJH16006 MJH16006 3-742 MPSUS5 MPS-U95 3-1068 MJH 160064 MJH16006A 3-750 NSD102 204923 3-79 MJH16008 MJH16008 3-742 NSD103 2N4923 3-79 MJH16010 MJH16010 3-758 NSD104 2N4923 3-79 MJH16010A MJH16010A 3-766 NSD105 2N4923 379 MJH16012 MJH16012 3-758 NSD106 2N4923 3-19 MJH16018 MJH16018 3-782 NSD131 MJE340 3-876 MJH16032 MJH160

MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage * * * VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction These are Pb-Free Devices www.onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS NPN BASE 1 BASE 1 EMITTER 3 MJH11018 MJH11020 MJH11022 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Collector-Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Emitter-Base Voltage VEB 5.0 Vdc

MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage * * * VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction Pb-Free Packages are Available* http://onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS NPN BASE 1 BASE 1 EMITTER 3 MJH11018 MJH11020 MJH11022 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Collector-Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Emitter-Base Voltage VE

MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage * * * VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction These are Pb-Free Devices www.onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS NPN BASE 1 BASE 1 EMITTER 3 MJH11018 MJH11020 MJH11022 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Collector-Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Emitter-Base Voltage VEB 5.0 Vdc

mp PD (Case) Watts @ 25C ts s Max 2.5 typ 5.0 fT MHz Min 350 BU323Z (Note 17.) 60 TIP3055 TIP2955 150 MJH11018 (Note 17.) MJH11017 (Note 17.) 400/15k 10 3.0 150 634 200 MJH11020 (Note 17.) MJH11019 (Note 17.) 400/15k 10 3.0 150 634 250 MJH11022 (Note 17.) MJH11021 (Note 17.) 400/15k 10 3.0 150 634 16 160 MJE4343 MJE4353 15 min 8.0 1.0 125 574 20 100 MJH6284 (Note 17.) MJH6287 (Note 17.) 750/18k 10 4.0 125 640 25 60 TIP35A TIP36A 15/75 15 0.6 typ 0.3 typ 10 3.0 125 737 100 TIP35C TIP36C 15/75 15 0.6 typ 0.3 typ 10 3.0 125 737 15 16. |hFE| @ 1.0 MHz 17. Darlington 18. When 2 voltages are given, the format is VCEO(sus)/VCES. http://onsemi.com 12 6.0 Page 1.2 typ 1.2 typ 8.0 Plastic (Isolated TO-220 Type) Device Type ICCont Amps Max VCEO(sus) Volts Min 1.0 250 MJF47 3.0 100 MJF31C 5.0 100 MJF122 (Note 20.) 450 8.0 1000 1000 PD (Case) Watts Page @ 25C hFE Min/Max @ IC Amp ts s Max 30/150 0.3 2.0 typ MJF32C 10 min 1.0 0.6 0.3 1.0 3.0 28 729 MJF127 (Note 20.) 2000 min 3.0 1.5 typ 1.5 typ 3.0 4.0 (Note 1

MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Preferred Device Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage * * * VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction Pb-Free Packages are Available* http://onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS NPN PNP COLLECTOR 2 COLLECTOR 2 BASE 1 BASE 1 IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III III III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII

H11 MJF47 MJF6107 MJF6668 MJH10012 -- 3-783 3-797 3-821 3-821 3-802 3-457 NSP205 NSP2090 NSP2091 NSP2092 NSP2093 NSP2100 NSP2101 TIP41B TIP125 TIP125 TIP126 TIP126 TIP120 TIP120 3-883 3-900 3-900 3-900 3-900 3-900 3-900 MJH11017 MJH11018 MJH11019 MJH11020 MJH11021 MJH11022 MJH16006A MJH11017 MJH11018 MJH11019 MJH11020 MJH11021 MJH11022 MJH16006A 3-825 3-825 3-825 3-825 3-825 3-825 3-830 NSP2102 NSP2103 NSP2370 NSP2480 NSP2481 NSP2490 NSP2491 TIP121 TIP121 TIP32B TIP31B TIP31B TIP32B TIP32B 3-900 3-900 3-873 3-873 3-873 3-873 3-873 3-512 3-847 3-512 3-520 3-520 3-520 3-696 NSP2520 NSP2955 NSP3054 NSP3055 NSP370 NSP371 NSP41 TIP31B MJE2955T TIP31B MJE3055T TIP32B TIP32B TIP41B 3-873 3-628 3-873 3-628 3-873 3-873 3-883 TIP121 MJE803 TIP121 MJE1320 MJE1320 MJH6284 MJH6287 MJH16010 MJH16010A MJH16012 MJH16018 MJH16032 MJH16034 MJH16106 Index and Cross Reference 1-26 MJW16010 MJW16010A MJW16010 MJW16018 MJW16018 MJW16018 MJE16106 Motorola Bipolar Power Transistor Device Data INDEX AND CROS

= 150 Vdc (Min) -- MJH11018, 17 VCEO(sus) = 200 Vdc (Min) -- MJH11020, 19 VCEO(sus) = 250 Vdc (Min) -- MJH11022, 21 * Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A * Monolithic Construction MJH11021* NPN MJH11018* MJH11020* IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII IIIIIIII III III IIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III v MJH11022* MAXIMUM RATINGS *Motorola Preferred Device MJH Rating Symbol Collector-Emitter Voltage VCEO VCB Collector-Base Voltage Emitte

MPSU04 MPS-U04 3-1044 MJH10012 MJH10012 3-596 MPSU05 MPS-U05 3-1048 MJH11017 MJH11017 3-1034 MPSU06 MPS-U06 3-1048 MJH11018 MJH11018 3-1034 MPSU07 MPS-U07 3-1050 MJH11019 MJH11019 3-1034 MPSU10 MPS-U10 3-1052 MJH11020 MJH11020 3-1034 MPSU11 MPS-U10 3-1052 MJH11021 MJH11021 3-1034 MPSU12 MPS-U45 3-1055 MJH11022 MJH11022 3-1034 MPSU45 MPS-U45 3-1055 MJH12004 MJH12004 3-644 MPSU5i MPS-U51 3-1058 MJH12005 MJH12005 _ MPSUS1A MPS-U514 3-1058 MJH13090 MJH13030 3-688 MPSU52 MPS-U52 3-1060 MJH13091 MJH16010 3-758 MPSUS55 MPS-U55 3-1062 MJH16002 MJH16002 3-976 MPSUS56 MPS-U56 3-1062 MJH16002A MJH16002A 3-734 MPSU57 MPS-U57 3-1064 MJH16004 MJH16004 3-976 MPSU60 MPS-U60 3-1066 MJH16006 MJH16006 3-742 MPSUS5 MPS-U95 3-1068 MJH 160064 MJH16006A 3-750 NSD102 204923 3-79 MJH16008 MJH16008 3-742 NSD103 2N4923 3-79 MJH16010 MJH16010 3-758 NSD104 2N4923 3-79 MJH16010A MJH16010A 3-766 NSD105 2N4923 379 MJH16012 MJH16012 3-758 NSD106 2N4923 3-19 MJH16018 MJH16018 3-782 NSD131 MJE340 3-876 MJH16032 MJH160

MJH11021 * MJH11019 * NPN * High DC Current Gain @ 10 Adc -- * * * MJH11018 * hFE = 400 Min (All Types) Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction MJH11020 * MJH11022 * *ON Semiconductor Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII IIIIIIII III III IIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III

MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Preferred Device Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage * * * http://onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS MARKING DIAGRAM VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction Pb-Free Packages are Available* IIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III III III IIIIIIIIIIIII III III III IIIIIIIIIIIII III III III IIIIIIIIIIIII III III III IIIIIIIIIIIII III III III IIIIIIIIIIIII III III III IIIIIIIIIIIII III III III IIIIIIIIIIIII III III III

MJH11021 * * High DC Current Gain @ 10 Adc -- * * * w NPN hFE = 400 Min (All Types) Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction MJH11018 * MJH11020 * MJH11022 * *ON Semiconductor Preferred Device These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative. IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII III

MJH11021 * MJH11019 * NPN * High DC Current Gain @ 10 Adc -- * * * MJH11018 * hFE = 400 Min (All Types) Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction MJH11020 * MJH11022 * *ON Semiconductor Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII IIIIIIII III III IIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III