2N5401 Preferred Device Amplifier Transistors PNP Silicon Features * Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector - Emitter Voltage VCEO 120 150 Vdc Collector - Base Voltage VCBO 130 160 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg 1.5 12 Watts mW/C -55 to +150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJ
5:D 6745 Dual VCA NET00136 8 NE5532N BAV21 U26:C V- RAD U25:A MINI 15K 1/4W R158 V+ R165 1/4W 56K 100V D36 U26:B R230 1/4W 470R RAD 4 NE5532N -15V LVGND2 R208 100R RAD R228 1/4W 15K LM13600N U35:C 6745 Dual VCA NET00127 NET00135 NET00117 R232 1/4W 10K RAD 2N5401 100V U35:A LM13600N TL072 U22:A MINI C153 100P BAV21 D41 (VCC) (VCC) R231 1/4W 2M2 . 1/4W 1/4W R163 47K R125 1/4W 4K99 NE5532N MINI MINI RAD NE5532N +15V R148 15K R159 4K7 U21:B +15V U23:B RAD 1/4W V+ RMS LIMITER TO92 4 NET00011 U24:C 100V C86 47N Q22 5103 non-RoHS 1/4W MINI 4148 RAD 1/4W MINI D42 R227 3K3 63V X2 R135 1/4W 2K 4 R134 1/4W 1K0 V- R133 1/4W 1K0 U23:A 2 U21:C NET00011 V+ C85 150N -15V 8 U24:A 63V UP DOWN C83 470N 1/4W 63V MINI 1/4W NE5532N WOOFCLIP RAD MPSA06 LEDGND R112 1/4W 1K8 RAD . RAD -15V V- R127 1/4W 470R 63V RAD RAD R157 3K3 RAD 8 C78 150N 33U C23 16V R128 56K R153 1K5 6858 1 NSL-32SR2 LVGND2 1/4W MINI D43 1/4W 1/4W MINI LIMIT L3 YEL 5907 1/4W W28:A R126 1/4W 4K99 MINI 1K0 R130 BAT85 R214 1/4W 470R R154 47K 4148 D62 R
2N5401 2N5401 Amplifier Transistor * Collector-Emitter Voltage: VCEO= 150V * Collector Dissipation: PC (max)=625mW * Suffix "-C" means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -160 Units V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage IC -5 V Collector Current -600 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100A, IE=0 Min. -160 Typ. Max. Units V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -150 V BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V ICBO Collector Cut-off Current VCB= -120V, IE=0 -50 nA IEBO Emitter Cut-off Current VEB= -3V, IC=0 -50 nA hFE * DC Current Gain
2N5401* Amplifier Transistors PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector-Emitter Voltage VCEO 120 150 Vdc Collector-Base Voltage VCBO 130 160 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 120 150 -- -- 130 160 -- -- 5.0 -- Vdc -- -- -- -- 100 50 100 50 nAdc -- 50 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Br
2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJ
0PBF Q33A 6925 TO220 {Function} 1N5246B 0W5 1 U5:A 16V0 ZD6 4 C B E TO-92 6880 4N35 . MINI 5 . U5:B R37 1/4W 75K 6 B R133A 1/8W 39R FLMP R36 1/4W 75K EBC TO-92 C35B 470P FLMP BC550C BC560C D E EBC TO-92 MJ21195 Q41B 6910 TO3 {Function} MJE11025 P E CB P D 2N5401 2N5551 MPSA06 MPSA13 MPSA43 MPSA56 MPSA63 MJ21195 Q37B 6910 TO3 {Function} IRF9520PBF Q33B 6925 TO220 {Function} G G D S G BAV21 2N5401 2N5551 MPSA06 MPSA13 MPSA43 MPSA56 MPSA63 BOTTOM VIEW C ZD11B 16V0 D37 BD139 BD237 BD238 MJE340 MJE350 MJE271 MJE270 BD140 E B 1W0 1N4745A D38B 4007 IRF830 MTP12P10 MTP10N15L IRL2910 IRF5210 MTP2P50E MTP8P20 IRF720 MTP23P06 IRF822 IRF4905 R41 1/4W 470K MJL21194 MJL1302A MJL3281A MJL21193 2SA2121-0 2SC5949-0 27K 1/4W R39 100V 19 FUSIBLE NE5532N V+ 8 AM4CE / AP6020 / V62 VER# DESCRIPTION OF CHANGE . PC#7935: Change C7 from #5259 to #5269 GG . ADDED PROD. NOTE 9, RE: INDICATING TARGET MODEL N V N V N V N V N V N V N V N V N V N V N V U3A:C V- DATE 02FEB2010 12OCT2011 D D D D D D D D D D D D31B 9
2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC (max) 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 * Hermetic packages * ESCC and JANS qualified 4 1 * Up to 100 krad(Si) low dose rate 2 LCC-3UB Description Figure 1. Internal schematic diagram The 2N5401HR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL JANSR2N5401UBx JANSR MIL-PRF-19500/766 UB 100 krad HDR - JANS2N5401UBx JANS MIL-PRF-19500/766 UB - - 2N5401RUBx ESCC 5202/014 UB 100 krad ESCC Target
2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet -- production data Features 3 BVCEO 150 V IC (max) 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65C to +200C TO-18 LCC-3 3 Hi-Rel PNP bipolar transistor Linear gain characteristics 4 1 2 ESCC qualified European preferred part list - EPPL 100 krad low dose rate Radiation level: lot specific total dose contact marketing for specified level LCC-3UB Figure 1. Internal schematic diagram Description The 2N5401HR is a silicon planar epitaxial PNP transistor available in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5202-014 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails. Table 1. Device summary Order codes ESCC part num. 2N5401UB1 - Eng. Model 2N5401SW 5202/014/05 ESCC Flight 2N5401UB06 5202/014/06 2N5401UB07 SOC5
2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC (max) 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65C to +200C 1 1 2 2 3 TO-18 LCC-3 3 Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL 100 krad low dose rate Radiation level: lot specific total dose contact marketing for specified level 4 1 2 LCC-3UB Figure 1. Internal schematic diagram Description The 2N5401HR is a silicon planar epitaxial PNP transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5202-014 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails. Table 1. Device summary Order codes ESCC Part num. Quality Level Rad level Packages 2N5401UB1 - Eng. Model SOC5401SW 5202/014/07 ESCC Flight 2N5401UB06 5202/014/06 2N5401UB07 SOC5401 Lead Finish M
T Q17 5107 2N5551 TO92 NPN TRAN T&R TA R74 4769 1/4W 1K4 1% T&R RES R155 4948 1/4W 1M 5% .2inU T&R RES U9 6603 74HC14N IC HEX INV SCHMID C2 5945 10U 63V 20%CAP T&R RAD C82 5230 180N 63V 5%CAP T&R RAD .2inFLM D18 6440 1N750ARL 4V7 0W5 ZENER 5% T&R Q18 5108 2N5401 TO92 PNP TRAN T&R TA R75 4768 5.0W 12K BLK RES R156 4979 1/4W 15K 5%MINI T&R RES U10 6603 74HC14N IC HEX INV SCHMID C3 5258 4U7 63V 20%CAP T&R 4X7MM .2inEL C83 5230 180N 63V 5%CAP T&R RAD .2inFLM D19 6733 BAT85 30V 0A2 DIODE SCHTKYT&R Q19 5114 MPSA92 R76 4788 1/4W 3K160 0.1% *** R157 4940 1/4W 10K 5% .2inU T&R RES U11 6728 MC78L05ACP TO92 P 5V0 REG T&R V4 C4 5265 68U 25V 20%CAP T&R RAD .2inEL C84 5226 68N 100V 5%CAP T&R RAD .2inFLM D20 6432 1N5248B Q20 5119 2N5638 R77 4686 1/4W 37K4 1% R158 4928 1/4W 56K 5% .2inU T&R RES U12 6884 NE5532N C5 5212 100N 63V 5%CAP T&R RAD .2inFLM C85 5203 47P 100V 2%CAP T&R RAD CER.2inNPO D21 6825 1N4148 75V 0A45 DIODE Q21 5105 MPSA13 TO92 NPN DARL T&R TA R78 4611 0.6W 18K7 1% MF R159 4943 1/4W 4K7 5% .2inU T
2N5401 Preferred Device Amplifier Transistors PNP Silicon Features * Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector - Emitter Voltage VCEO 120 150 Vdc Collector - Base Voltage VCBO 130 160 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg 1.5 12 Watts mW/C -55 to +150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 BASE 1 EMITTER TO-92 CASE 29 STYLE 1 12 3 MARKING DIAGRAM 2N54xx THERMAL CHARACTERISTICS Charact
2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector - Emitter Voltage Rating VCEO 120 150 Vdc Collector - Base Voltage VCBO 130 160 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max Unit 120 150 -- -- 130 160 -- -- 5.0 -- Vdc -- -- -- -- 100 50 100 50 nAdc -- 50 OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown V
226AE (1-WATT TO-92) -- PNP MPSW92 300 0.5 25 Case 29-04 -- TO-226AA (TO-92) -- NPN BF844 MPSA44 2N6517 BF393 MPSA42 2N5551 400 400 350 300 300 160 0.3 0.3 0.5 0.5 0.5 0.6 50 40 30 40 40 80 Case 29-04 -- TO-226AA (TO-92) -- PNP BF493S 2N6520 MPSA92 2N6519 2N5401 350 350 300 300 150 0.5 0.5 0.5 0.5 0.6 40 30 40 45 60 Case 29-04 -- TO-226AA (TO-92) NPN BF420 BF422 PNP BF421 BF423 hFE @ IC VCE(sat) @ IC & IB f T @ IC V(BR)CEO Volts Min IC Amp Cont Min mA Volts Max mA mA MHz Min mA Style 300 250 0.5 0.5 50 50 25 25 2.0 2.0 20 20 2.0 2.0 60 60 10 10 14 14 Devices listed in bold, italic are Motorola preferred devices. Motorola Small-Signal Transistors, FETs and Diodes Device Data Selector Guide 1-5 Plastic-Encapsulated Transistors (continued) Table 6. Plastic-Encapsulated RF Transistors The RF transistors are designed for small-signal amplification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Device Type V(BR)CEO Volts Min hFE @ IC IC mA Max
2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector-Emitter Voltage VCEO 120 150 Vdc Collector-Base Voltage VCBO 130 160 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 150 -- 160 -- 5.0 -- -- -- 50 50 -- 50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc
2N5401* *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol | 2N5400 | 2N5401 Unit CASE 29-04, STYLE 1 CollectorEmitter Voltage VCEO 120 150 Vide TO-92 (TO-226AA) CollectorBase Voltage VcBo 130 160 Vde EmitterBase Voltage VEBO 5.0 Vde Collector Current Continuous Io 600 mAdc Total Device Dissipation @ Ta = 25C Pp 625 mw Derate above 25C 5.0 mWwPC Total Device Dissipation @ Tc = 25C Pp 15 Watts Derate above 25C 12 mw Operating and Storage Junction Ty. Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Raya 200 CW Thermal Resistance, Junction to Case ReJc 83.3 CAV ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic | Symbol | Min | Max Unit | OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1) ViBR)CEO Vde (lo = 1.0 mAdc, Ip = 0) 2N5400 120 _ 2N5401 150 _ Collector~ Base Breakdown Voltage V(BR)CBO Vde (I = 100 pAde, IE = 0) 2N5400