BC327/BC328 PNP General Purpose Transistor COLLECTOR P b Lead(Pb)-Free 1 TO-92 2 BASE 1 3 2 EMITTER 3 Maximum Ratings(TA=25C unless otherwise noted) Symbol BC327 BC328 Unit Collector-Base voltage VCBO -50 -30 V Collector-Emitter voltage VCEO -45 -25 V Emitter-Base voltage VEBO -5.0 -5.0 V Rating Collector Current Continuous lC 800 mA Total Device Dissipation Alumina Substrate,TA=25C PD 625 mW/C Operating Junction Temperature Range TJ -55 to +150 C Tstg -55 to +150 C Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max BC327 BC328 V(BR)CBO -50 -30 - - BC327 BC328 V(BR)CEO -45 -25 - - BC327 BC328 V(BR)EBO -5.0 - - Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100A, IE=0 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IC=-10A, IC=0 WEITRON http://www.weitron.com.tw 1/4 V V Vdc 29-Jun-06 BC327/BC328 ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) (Countinued) Min Typ Characteristics Sy
BC327/BC328 PNP General Purpose Transistor COLLECTOR P b Lead(Pb)-Free 1 TO-92 2 BASE 1 3 2 EMITTER 3 Maximum Ratings(TA=25C unless otherwise noted) Symbol BC327 BC328 Unit Collector-Base voltage VCBO -50 -30 V Collector-Emitter voltage VCEO -45 -25 V Emitter-Base voltage VEBO -5.0 -5.0 V Rating Collector Current Continuous lC 800 mA Total Device Dissipation Alumina Substrate,TA=25C PD 625 mW/C Operating Junction Temperature Range TJ -55 to +150 C Tstg -55 to +150 C Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max BC327 BC328 V(BR)CBO -50 -30 - - BC327 BC328 V(BR)CEO -45 -25 - - BC327 BC328 V(BR)EBO -5.0 - - Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100A, IE=0 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IC=-10A, IC=0 WEITRON http://www.weitron.com.tw 1/4 V V V 29-Jun-06 BC327/BC328 ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) (Countinued) Min Typ Characteristics Symb
BC327/BC328 PNP General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES TO-92 Power dissipation PCM : 0.625 WTamb=25 Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : BC327 -50 V 1 2 3 1 2 3 BC328 -30 Operating and storage junction temperature range 1. COLLECTOR T J T stg: -55 to +150 2. BASE 3 . EMITTER . ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol VCBO Collector-base breakdown voltage Test conditions MIN TYP MAX UNIT Ic= -100A , IE=0 BC327 -50 V BC328 -30 V -45 V -25 V -5 V IC= -10 mA , IB=0 Collector-emitter breakdown voltage VCEO BC327 BC328 Emitter-base breakdown voltage VEBO Collector cut-off current ICBO IE= -10A, IC=0 BC327 VCB= -45V, IE=0 -0.1 A BC328 VCB= -25V, IE=0 -0.1 A VCE= -40V, IB=0 -0.2 A VCE= -20 V, IB=0 -0.2 A IEBO VEB= -4 V, IC=0 -0.1 A hFE(1) VCE=-1V, IC= -100mA 100 hFE(2) VCE=-1V, IC= -300mA 40 Collector-emitter saturation voltage VCE(sat) IC=-500 mA
BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA
BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA
x. Pt 300mW both sides;hFE1/2 1.0 max;VBE(1-2) 15mV max. . : mV max. Pt 300mW both sides;hFE1/2 1.0 max;VBE(1-2) 15mV_ max. Pt..30W:hFE( 1-2}. E 1-VBE2)-1.0mV max:B Pc-..75W; BVCBO-60V; BVEBO-7.0V; HFE-45min at IC-10ma, VCE-10V. - max. -1.1 max; - mV max. BC327/BC328 i hFEt/hFE2 1.41 max;Pt W:BVCES 50V;ft 100MHz. . ~ .80 m BSY42 i Pc-.70W max; BVCBO-20V; Ic-200mA;hFE-25-120;ft- min. -.80 min; . - max. cp92" i hFE1/2-.80 min;VBE1/2-10mV_ max:AVBE1/2-20uV/C max. o n: - = max, cpes* i hFE1/2-.80 min;VBE1/2-5.0mV max:;AVBE1/2-10uV/C max. =, - max. cDg8* i hFE1/2-.80 min;VBE1/2-10mV max;AVBE1/2-20uV/C max. * - oe a 2 max, cDd932* i hFE1/2-.80 min;VBE1/2-5.0mV max;AVBE1/2-10uV/C max. * =, - -. . max. cbp962* i HFE1/2-.80 min;VBE1/2-10mV_ max;AVBE1/2-20uV/C max. * S ~ -. - = max. CS$2639* i Pt. 30W:hFE1/2-.90 min;VBE(1 .OmV;hFE-65 max. at IC-1.0mA. -. -2)-5. max. at : CS2643* i Pt. 3OW:hFE 1/2-.80 min: VBE(1-2)-10mV;hFE-65 max. at [C-1.0mA. * = : = =. n; ~ max at IC-. C$29011* i Pt. 3OW-HFE1/2-.90 min;
BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.7 V
ors, FETs and Diodes Device Data 2-91BC327,-16,-25 BC328,-16,-25 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) (Continued) Characteristic Symbol Min | Typ | Max | Unit | ON CHARACTERISTICS DC Current Gain. ; hee _ (Ig =-100 mA, VcE =-1.0 V) BC327/BC328 100 _ 630 BC327-16/BC328-16 100 _ 250 BC327-25/BC328-25 160 _ 400 (I =-300 mA, VcE =-1.0 V) 40 _ _ BaseEmitter On Voltage VBE(on) _ _ 1.2 Vde (Ig = 300 mA, Voge =-1.0 V) CollectorEmitter Saturation Voltage VCE(sat) _ _ ~-0.7 Vde (ig =-500 mA, Ip =50 mA) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cob _ 1 _ pF (Vog =-10 V, IE = 0, f= 1.0 MHz) CurrentGain Bandwidth Product fr _ 260 _ MHz (Ig =-10 mA, VcE = ~5.0 V, f = 100 MHz) 1.0 07 05 0.3 02 0.1 0.07 0.05 0.03 0.02 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.01 0.001 0.002 0.005 0.01 0.02 0.05 O41 02 rat [LLL 9yclt) = (1) 9c Qc = 100CAV MAX Halt) =H) OJa @ Ja = 375C MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT ty Tytpk) - Te = Pipk) Guc(t) 10 20 50 Ee
age Veso le= -10 2 A, Ic=0 -5 V 8C327 Ves= -45 V, le=0 Collector cut-off current {cao -0.1 HA BC328 Vcs= -25 V, le=0 BC327 Vce= -40 V, In=0 Collector cut-off current Ice - -0.2 pA BC328 Vce= -20 V, la=0 Emitter cut-off current leBo Vep= -4 V, Ic=0 -0.1 LA BC327/BC328 100 630 BC327-16/BC328-16 hres) Vce= -1 V, Ic= -100 MA 100 250 DC current gain BC327-25/BC328-25 160 | 400 hre(2) Vce= -1 V, Ic= -300 mA 40 Coliector-emitter saturation voltage VcEsat Ic= -500 mA, la= -50 mA -0.7 Vv Base-emitter saturation voltage VBEsat Ic= -500 mA, In= -50 mA -1.2 Vv Vce= -5 V, [c= -10 mA Transition frequency fr 260 MHz f =100MHz 78Typical Characteristics I = -300 mA Ic = ~100 mA Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) Ic =-10 mA 0.01 ~0.1 -1.0 -10 ~100 Ip, BASE CURRENT (mA) Saturation Region 6yc for VCE sat Oy, TEMPERATURE COEFFICIENTS (mV/C) -1.0 ~10 ~100 Ic, COLLECTOR CURRENT -1000 Temperature Coefficients ~1000 Ty= 135C 100 pis e = a a mw 3 mw -100 - 9 9 Ta = 25) Cc oO Loy 3 8 a = CURRENT LIMIT o ee THERMAL LIM
Inc. 1996 IEBO Vdc nAdc nAdc 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max 100 100 160 40 -- -- -- -- 630 250 400 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE -- BC327/BC328 BC327-16/BC328-16 BC327-25/BC328-25 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) VBE(on) -- -- -1.2 Vdc Collector - Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -- -- -0.7 Vdc Cob -- 11 -- pF fT -- 260 -- MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE 0.01 0.03 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME
Inc. 1996 IEBO Vdc nAdc nAdc 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 40 -- -- -- -- 630 250 400 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE -- BC327/BC328 BC327-16/BC328-16 BC327-25/BC328-25 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) VBE(on) -- -- -1.2 Vdc Collector - Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -- -- -0.7 Vdc Cob -- 11 -- pF fT -- 260 -- MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE 0.01 0.03 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME
x. Pt 300mW both sides;hFE1/2 1.0 max;VBE(1-2) 15mV max. . : mV max. Pt 300mW both sides;hFE1/2 1.0 max;VBE(1-2) 15mV_ max. Pt..30W:hFE( 1-2}. E 1-VBE2)-1.0mV max:B Pc-..75W; BVCBO-60V; BVEBO-7.0V; HFE-45min at IC-10ma, VCE-10V. - max. -1.1 max; - mV max. BC327/BC328 i hFEt/hFE2 1.41 max;Pt W:BVCES 50V;ft 100MHz. . ~ .80 m BSY42 i Pc-.70W max; BVCBO-20V; Ic-200mA;hFE-25-120;ft- min. -.80 min; . - max. cp92" i hFE1/2-.80 min;VBE1/2-10mV_ max:AVBE1/2-20uV/C max. o n: - = max, cpes* i hFE1/2-.80 min;VBE1/2-5.0mV max:;AVBE1/2-10uV/C max. =, - max. cDg8* i hFE1/2-.80 min;VBE1/2-10mV max;AVBE1/2-20uV/C max. * - oe a 2 max, cDd932* i hFE1/2-.80 min;VBE1/2-5.0mV max;AVBE1/2-10uV/C max. * =, - -. . max. cbp962* i HFE1/2-.80 min;VBE1/2-10mV_ max;AVBE1/2-20uV/C max. * S ~ -. - = max. CS$2639* i Pt. 30W:hFE1/2-.90 min;VBE(1 .OmV;hFE-65 max. at IC-1.0mA. -. -2)-5. max. at : CS2643* i Pt. 3OW:hFE 1/2-.80 min: VBE(1-2)-10mV;hFE-65 max. at [C-1.0mA. * = : = =. n; ~ max at IC-. C$29011* i Pt. 3OW-HFE1/2-.90 min;
/D BC327,-16,-25 BC328,-16,-25 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 40 -- -- -- -- 630 250 400 -- Unit ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE -- BC327/BC328 BC327-16/BC328-16 BC327-25/BC328-25 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 mA, VCE = -1.0 V) VBE(on) -- -- -1.2 Vdc Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -- -- -0.7 Vdc Cob -- 11 -- pF fT -- 260 -- MHz SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current-Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.01 0.001 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t
x. Pt 300mW both sides;hFE1/2 1.0 max;VBE(1-2) 15mV max. . : mV max. Pt 300mW both sides;hFE1/2 1.0 max;VBE(1-2) 15mV_ max. Pt..30W:hFE( 1-2}. E 1-VBE2)-1.0mV max:B Pc-..75W; BVCBO-60V; BVEBO-7.0V; HFE-45min at IC-10ma, VCE-10V. - max. -1.1 max; - mV max. BC327/BC328 i hFEt/hFE2 1.41 max;Pt W:BVCES 50V;ft 100MHz. . ~ .80 m BSY42 i Pc-.70W max; BVCBO-20V; Ic-200mA;hFE-25-120;ft- min. -.80 min; . - max. cp92" i hFE1/2-.80 min;VBE1/2-10mV_ max:AVBE1/2-20uV/C max. o n: - = max, cpes* i hFE1/2-.80 min;VBE1/2-5.0mV max:;AVBE1/2-10uV/C max. =, - max. cDg8* i hFE1/2-.80 min;VBE1/2-10mV max;AVBE1/2-20uV/C max. * - oe a 2 max, cDd932* i hFE1/2-.80 min;VBE1/2-5.0mV max;AVBE1/2-10uV/C max. * =, - -. . max. cbp962* i HFE1/2-.80 min;VBE1/2-10mV_ max;AVBE1/2-20uV/C max. * S ~ -. - = max. CS$2639* i Pt. 30W:hFE1/2-.90 min;VBE(1 .OmV;hFE-65 max. at IC-1.0mA. -. -2)-5. max. at : CS2643* i Pt. 3OW:hFE 1/2-.80 min: VBE(1-2)-10mV;hFE-65 max. at [C-1.0mA. * = : = =. n; ~ max at IC-. C$29011* i Pt. 3OW-HFE1/2-.90 min;
BC327/BC328 BC327/ BC328 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.625 TO-92 W (Tamb=25) Collector current ICM: -0.8 A Collector-base voltage BC327 -50 V VCBO: BC328 -30 V Operating and storage junction temperature range 1. COLLECTOR 2. BASE 1 2 3 3. EMITTER TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Collector-base breakdown voltage VCBO Test conditions MIN TYP MAX UNIT Ic= -100A , IE=0 BC327 -50 V BC328 -30 V -45 V -25 V -5 V Collector-emitter breakdown voltage IC= -10 mA , IB=0 BC327 VCEO BC328 Emitter-base breakdown voltage VEBO Collector cut-off current ICBO IE= -10A, IC=0 BC327 VCB= -45V, IE=0 -0.1 A BC328 VCB= -25V, IE=0 -0.1 A VCE= -40V, IB=0 -0.2 A VCE= -20 V, IB=0 -0.2 A IEBO VEB= -4 V, IC=0 -0.1 A hFE(1) VCE=-1V, IC= -100mA 100 hFE(2) VCE=-1V, IC= -300mA 40 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50 mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500 mA, IB=-50 mA -1.2 V Collector cut-off