ES1DLW - ES1JLW Taiwan Semiconductor CREAT BY ART 1A, 200V - 600V Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA SOD-123W Case: SOD-123W Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 16 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) PARAMETER SYMBOL Marking Code ES1DLW ES1GLW ES1JLW EDLW EGLW EJLW UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 V Maximu
ES1DLW - ES1JLW Taiwan Semiconductor CREAT BY ART 1A, 200V - 600V Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: SOD-123W SOD-123W Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 16 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) PARAMETER SYMBOL Marking Code ES1DLW ES1GLW ES1JLW EDLW EGLW EJLW UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 V Maximu
APPLICATIONS Used in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. Maximun Ratings and Electrical Characteristics at 25C FES1AL FES1BL FES1CL FES1DL FES1FL FES1GL FES1HL FES1JL Marking Code EAL EBL ECL EDL EFL EGL EHL EJL VRRM Maximum Recurrent Peak Reverse Voltage (V) 50 100 150 200 300 400 500 600 VRMS Maximum RMS Voltage (V) 35 70 105 140 210 280 350 420 VDC Maximum DC Blocking Voltage (V) 50 100 150 200 300 400 500 600 IF(AV) Forward current at TC = 120 C IFSM 8.3 ms. peak forward surge current VF IR 1.0 A 30 A (Jedec Method) Maximum Instantaneous Forward 0.95 V Voltage at 1.0A Maximum DC Reverse Current Tj = 25 C 5 A at Rated DC Blocking Voltage Tj = 100 C 100 A Trr Maximum Reverse Recovery Time (0.5/1/0.25A) Cj Rth (j-a) Rth (j-c) Typical Junction Capacitance (1MHz; -4V) Tj - Tstg 1.3 V Maximum Thermal Resistance (5x5 mm2 x 130 Copper Area) Operating Junction and Storage Temperat
APPLICATIONS Used in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. Maximun Ratings and Electrical Characteristics at 25C FES1AL FES1BL FES1CL FES1DL FES1FL FES1GL FES1HL FES1JL Marking Code EAL EBL ECL EDL EFL EGL EHL EJL VRRM Maximum Recurrent Peak Reverse Voltage (V) 50 100 150 200 300 400 500 600 VRMS Maximum RMS Voltage (V) 35 70 105 140 210 280 350 420 VDC Maximum DC Blocking Voltage (V) 50 100 150 200 300 400 500 600 IF(AV) Forward current at TC = 120 C IFSM 8.3 ms. peak forward surge current VF IR 1.0 A 30 A (Jedec Method) Maximum Instantaneous Forward 0.95 V Voltage at 1.0A Maximum DC Reverse Current Tj = 25 C 5 A at Rated DC Blocking Voltage Tj = 100 C 100 A Trr Maximum Reverse Recovery Time (0.5/1/0.25A) Cj Typical Junction Capacitance (1MHz; -4V) Rth (j-c) Maximum Thermal Resistance Rth (j-a) Tj - Tstg 1.3 V 2 (5x5 mm x 130 Copper Area) Operating Junction and Storage Tempera
APPLICATIONS Used in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. Maximun Ratings and Electrical Characteristics at 25C FES1AL FES1BL FES1CL FES1DL FES1FL FES1GL FES1HL FES1JL Marking Code EAL EBL ECL EDL EFL EGL EHL EJL VRRM Maximum Recurrent Peak Reverse Voltage (V) 50 100 150 200 300 400 500 600 VRMS Maximum RMS Voltage (V) 35 70 105 140 210 280 350 420 VDC Maximum DC Blocking Voltage (V) 50 100 150 200 300 400 500 600 IF(AV) Forward current at TC = 120 C IFSM 8.3 ms. peak forward surge current VF IR 1.0 A 30 A (Jedec Method) Maximum Instantaneous Forward 0.95 V Voltage at 1.0A Maximum DC Reverse Current Tj = 25 C 5 A at Rated DC Blocking Voltage Tj = 100 C 100 A Trr Maximum Reverse Recovery Time (0.5/1/0.25A) Cj Typical Junction Capacitance (1MHz; -4V) Rth (j-c) Maximum Thermal Resistance Rth (j-a) Tj - Tstg 1.3 V 2 (5x5 mm x 130 Copper Area) Operating Junction and Storage Tempera
CURVES (ES1AL THRU ES1JL) FIG. 2 TYPICAL FORWARD CHARACTERISRICS FIG.1 FORWARD CURRENT DERATING CURVE 100 ES1HL-ES1JL 1 0.8 0.6 0.4 RESISTIVE OR INDUCTIVE LOAD 0.2 INSTANTANEOUS FORWARD A CURRENT (A) AVERAGE FORWARD A CURRENT (A) 1.2 ES1FL-ES1GL 10 ES1AL-ES1DL 1 0.1 0 80 90 100 110 120 130 140 150 LEAD TEMPERATURE (oC) TA=25 Pulse Width=300us 1% Duty Cycle 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE A CURRENT (A) 30 8.3mS Single Half Sine Wave JEDEC Method 25 20 15 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 5 TYPICAL REVERSE CHARACTERISTICS 1000 TA=125 INSTANTANEOUS REVERSE A CURRENT (uA) 100 FIG. 4 TYPICAL JUNCTION CAPACITANCE 14 CAPACITANCE (pF) 12 ES1AL-ES1DL 10 8 6 ES1FL-ES1JL 4 10 TA=75 1 TA=25 0.1 TA=25 f=1.0MHz Vsig=50mVp-p 2 0.01 0 1 10 REVERSE VOLTAGE (V) 100 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version:F11 140
0 2 60 800 2 60 1000 2 100 50 3 100 200 3 100 400 3 100 600 3 100 800 3 100 1000 3 200 50 3 200 100 3 200 200 3 200 400 3 200 600 3 200 800 3 200 1000 3 150 600 16 SUPERFAST RECTIFIERS Taiwan Semi Part No. 821-SF12 821-ES1B 821-ES1BL 821-SF14 821-ES1D 821-ES1DL 821-SF16 821-ES1GL 821-ES1HL 821-SF18 821-ES1J 821-ES1JL SF12 ES1B ES1BL SF14 ES1D ES1DL SF16 ES1GL ES1HL SF18 ES1J ES1JL Peak Max. Max. Fwd./Rev. Reverse Aver. Surge Rect. Current Voltage Current IFSM (A) VRM (V) Io (A) DO-41 30 100 1 DO-214AC 30 100 1 Sub-SMA 30 100 1 DO-41 30 200 1 DO-214AC 30 200 1 Sub-SMA 30 200 1 DO-41 30 400 1 Sub-SMA 30 400 1 Sub-SMA 30 500 1 DO-41 30 600 1 DO-214A 30 600 1 Sub-SMA 30 600 1 Package 10 .40 .43 .52 .40 .43 .53 .40 .53 .55 .33 .52 .55 .267 .249 .302 .267 .249 .306 .267 .306 .317 .221 .304 .317 MOUSER STOCK NO. 100 .111 .107 .13 .111 .107 .131 .111 .131 .136 .092 .13 .136 10 .185 .242 .291 .291 .291 .139 .139 .139 .139 .139 .147 .153 .33 .33 .33 .33 .33 .33 .259 .279 .279 .259 .259 .259 .2
204UT106 DA221TL DA227TL DAN202KT146 DAN202UT106 DAN217UT106 DAN222TL DAN235UT106 DAP202KT146 DAP202UT106 DAP222TL FMN1T148 FMP1T148 IMN10T108 IMN11T110 IMP11T110 UMN11NTN UMR12NTN VF V 0.95 0.95 0.95 0.95 1.3 1.3 1.7 1.7 Mftrs. List No. ES1AL ES1BL ES1CL ES1DL ES1FL ES1GL ES1HL ES1JL Mftr. TSC TSC TSC TSC TSC TSC TSC TSC *Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) 503784 Mftrs. Price Each List No. Description Order Code 155-9123 155-9124 155-9125 155-9127 155-9128 155-9129 155-9130 155-9131 ES1AL Diode, Ultra-Fast SMF 1A 50V ES1BL Diode, Ultra-Fast SMF 1A 100V ES1CL Diode, Ultra-Fast SMF 1A 150V ES1DL ES1FL ES1GL ES1HL ES1JL Diode, Ultra-Fast SMF 1A 200V Diode, Ultra-Fast SMF 1A 300V Diode, Ultra-Fast SMF 1A 400V Diode, Ultra-Fast SMF 1A 500V Diode, Ultra-Fast SMF 1A 600V 5+ 100+ 250+ 1K+ 0.079 0.131 0.131 0.138 0.138 0.138 0.144 0.144 0.052 - - - - - - 0.093 0.093 0.096 - - 0.040 - - - - - - 0.069 0.069 0.071 - - 0.035 - - -
0.6 0.4 RESISTIVE OR INDUCTIVE LOAD 0.2 0 80 90 100 110 120 LEAD TEMPERATURE 130 140 150 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 100 Pulse Width=300s 1% Duty Cycle ES1HL-ES1JL 10 ES1FL-ES1GL ES1AL-ES1DL 1 0.1 0.4 (oC) 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) 30 25 8.3ms Single Half Sine Wave 20 15 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz Document Number: DS_D1410026 100 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT (A) PEAK FORWARD SURGE CURRENT (A) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 TJ=125C 10 TJ=75C 1 0.1 TJ=25C 0.01 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 140 Version: K15 ES1AL - ES1JL Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE 14 CAPACITANCE (pF) 12 ES1AL-ES1DL 10 8 6 ES1FL-ES1JL 4 f=1.0MHz Vsig=50mVp-p 2 0 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS Sub SMA Unit (mm) DIM. Unit (inch) Min Max Min Max B 1.70 1.90 0.067 0.07
ISTICS 1.2 1 0.8 0.6 0.4 RESISTIVE OR INDUCTIVE LOAD 0.2 0 80 90 100 110 120 130 140 150 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 100 Pulse Width=300s 1% Duty Cycle ES1HL-ES1JL 10 ES1FL-ES1GL ES1AL-ES1DL 1 0.1 0.4 LEAD TEMPERATURE (oC) 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) 30 25 8.3ms Single Half Sine Wave 20 15 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz Document Number: DS_D1405035 100 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT (A) PEAK FORWARD SURGE CURRENT (A) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT TJ=125 100 10 TJ=75 1 TJ=25 0.1 0.01 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 140 Version: I14 ES1AL thru ES1JL Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE 14 CAPACITANCE (pF) 12 ES1AL-ES1DL 10 8 6 ES1FL-ES1JL 4 f=1.0MHz Vsig=50mVp-p 2 0 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS Unit (mm) DIM. Unit (inch) Min Max Min Max B 1.70 1.90 0
E LOAD 0.2 0 80 90 100 110 120 PEAK FORWARD SURGE CURRENT (A) LEAD TEMPERATURE 130 140 150 (oC) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 10 ES1AL-ES1DL 1 0.1 TA=25 Pulse Width=300us 1% Duty Cycle 30 0.01 8.3mS Single Half Sine Wave JEDEC Method 25 0.4 0.8 20 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) 15 10 FIG. 5 TYPICAL REVERSE CHARACTERISTICS 5 1000 0 1 10 100 TA=125 INSTANTANEOUS REVERSE CURRENT (uA) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL JUNCTION CAPACITANCE 14 12 CAPACITANCE (pF) 0.6 ES1AL-ES1DL 10 8 6 ES1FL-ES1JL 4 TA=25 f=1.0MHz Vsig=50mVp-p 2 100 10 TA=75 1 TA=25 0.1 0.01 0 1 10 REVERSE VOLTAGE (V) 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version:G12 Ordering information Part No. Package Packing 1.8K / 7" REEL Sub-SMA 3K / 7" REEL Sub-SMA Sub-SMA 7.5K / 13" REEL Sub-SMA 7.5K / 13" REEL Sub-SMA 10K / 13" REEL Sub-SMA 10K / 13" REEL ES1XL (No
10 120 PEAK FORWARD SURGE CURRENT (A) LEAD TEMPERATURE 130 140 150 (oC) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE ES1HL-ES1JL ES1FL-ES1GL 10 ES1AL-ES1DL 1 30 0.1 8.3mS Single Half Sine Wave JEDEC Method 25 20 0.4 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) TA=25 15 10 FIG. 5 TYPICAL REVERSE CHARACTERISTICS 5 1000 0 1 10 100 TA=125 INSTANTANEOUS REVERSE CURRENT (uA) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL JUNCTION CAPACITANCE 14 12 CAPACITANCE (pF) 0.6 ES1AL-ES1DL 10 8 6 ES1FL-ES1JL 4 TA=25 f=1.0MHz Vsig=50mVp-p 2 100 10 TA=75 1 TA=25 0.1 0.01 0 1 10 REVERSE VOLTAGE (V) 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version:H13 Ordering information Part No. ES1XL (Note) Packing code Packing code (Green) 8mm RU RUG 3K / 7" REEL 8mm RV RVG Sub-SMA 7.5K / 13" REEL 8mm RT RTG Sub-SMA 7.5K / 13" Plastic REEL 8mm MT MTG Sub-SMA 10K / 13" REEL 8mm RQ RQG Sub-SM
2 .106 .106 .12 .067 .021 .067 .022 .071 .022 .071 .078 .085 .054 .017 .054 .018 .057 .018 .057 .059 .065 TAIWAN SEMICONDUCTOR SUPERFAST RECTIFIERS Surface Mount Device MOUSER STOCK NO. 821-ES1AL 821-SF12 821-ES1B 821-ES1BL 821-ES1CL 821-SF14 821-ES1D 821-ES1DL 821-ES1FL 821-SF16 821-ES1G 821-ES1GL 821-ES1HL 821-SF18 821-ES1J 821-ES1JL 821-ES2B 821-ES2D 821-ES2G 821-ES2J For quantities of 2500 and up, call for quote. Peak Max. Max. Price Each Fwd./Rev. Aver. Taiwan Reverse Surge Package Rect. Semi Current Voltage Current Part No. 100 500 1 IFSM (A) VRM (V) Io (A) ES1AL Sub-SMA30 50 1 .13 .099 .085 SF12 DO-4130 1001.11 .085 .071 ES1B DO-214AC30 100 1 .12 .091 .078 ES1BL Sub-SMA30 100 1 .13 .099 .085 ES1CL Sub-SMA30 150 1 .13 .099 .085 SF14 DO-4130 2001.12 .091 .078 ES1D DO-214AC30 200 1 .13 .099 .085 ES1DL Sub-SMA30 200 1 .14 .106 .091 ES1FL Sub-SMA30 300 1 .14 .106 .091 SF16 DO-4130 4001.12 .091 .078 ES1G DO-214AC30 400 1 .13 .106 .085 ES1GL Sub-SMA30 400 1 .14 .106 .091 ES1HL Sub-SM
astic case * Terminal: Pure tin plated, lead free. * Polarity: Color band cathode end * Packaging: 12 mm. tape per EIA STD RS-481 * Weight: 0.015 g. * Marking code refer to Note. Maximun Ratings and Electrical Characteristics at 25 C FES1AL FES1BL FES1CL FES1DL FES1FL FES1GL FES1HL FES1JL EALYM EBLYM ECLYM EDLYM EFLYM EGLYM EHLYM EJLYM Marking Code VRRM Maximum Recurrent Peak Reverse Voltage (V) 50 100 150 200 300 400 500 600 VRMS Maximum RMS Voltage (V) 35 70 105 140 210 280 350 420 VDC Maximum DC Blocking Voltage (V) 50 100 150 200 300 400 500 600 IF(AV) Forward current at TL = 120 C IFSM 8.3 ms. peak forward surge current VF IR 1.0 A 30 A (Jedec Method) Maximum Instantaneous Forward 0.95 V Voltage at 1.0A Maximum DC Reverse Current Ta = 25 C 5 A at Rated DC Blocking Voltage Ta = 100 C 100 A Trr Maximum Reverse Recovery Time (0.5/1/0.25A) Cj Typical Junction Capacitance (1MHz; -4V) Rth (j-l) Maximum Thermal Resistance Rth (j-a) Tj - Tstg 2 (5x5 mm x 130 Copper Area) Operating Junction and Stora
fy TSC for any damages resulting from such improper use or sale. Document Number: DS_D1405052 Version:J14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Taiwan Semiconductor: ES1AL ES1BL ES1CL ES1DL ES1FL ES1GL ES1HL ES1J ES1G ES1D ES1B ES1A ES1C ES1F ES1H ES1G E2