TESV TES6 USM USV US6 TSM TSV TS6 SOT-23 (Unit: mm) VCEO IC (0.6 X0.8) (1.2 X0.8) (1.60X0.85) (1.6 X1.2) (1.6 X1.2) (2.0X1.25) (2.0X1.25) (2.0X1.25) (2.9X1.6) (2.9X1.6) (2.9X1.6) (2.93X1.3) 50mA KTD1824E KTD1824 200mA 2N3904V 2N3904E 2N2904E 2N3904U 600mA KTN2222AE KTN2222AU KN2222AS KN4401S KTN2222AS 100mA BC847W BCW71 BCW72 BC847 BC850 500mA BC817W BCX19 2N2904U 2N2904U1 KN3904S 2N3904S 40V 2A 45V 800mA BC817 1.5A 150mA KTC4075F KTC601F KTC801F KTC4075V KTC4075E 50V KTC801E KTC801U KTX401U KTX401E KTC811E KTC4075 KTC811U KTX402U KTC601E KTC812E KTC4666 KTC812U KTC601U KTX102E KTX102U KTC3295 KTC3875S KTC9014S 200mA KTD1854T 1A KTC3551T 2A 3A KTC3552T 5A 8A 100mA BCV71/72 500mA MMBTA05 1A 60V 3A 4A 5A 8A 65V 100mA 100mA BC846W BC846 BSS64 400mA 500mA MMBTA06 800mA 1A 1.5A 80V 3A 4A 5A 6A 8A 10A 1A 2A 3A 5A 100V 6A 7A 10A 25A 10 http://www.kec.co.kr KTC3571S Line-up Bipolar Junction Transistor NPN Transistor ( VCEO : 40V ~ 100V ) SOT-89 (4.7X2.5) SOT-223 (6.8X1.8) DPAK TO-92M TO-92 TO-92L IPAK TO
KTD998 KTH2369 KTH2369 KTH2369A KTH2369A KTJ6131E KTJ6164S KTK161 KTK211 KTK5131E KTK5131S KTK5131U KTK5131V KTK5132E KTK5132S KTK5132V KTK5133S KTK5134S KTK5162S KTK5164S KTK5164U KTK5266U KTK5266UK KTK596 KTK596S KTK597 KTK597E KTK597V KTN2222 KTN2222A KTN2222AE KTN2222AS KTN2222AU KTN2222S KTN2222U KTN2369 KTN2369A KTN2369AS KTN2369AU KTN2369S KTN2369U KTN2907 KTN2907A KTN2907AE KTN2907AS KTN2907AU KTN2907S KTN2907U KTX101E KTX101F KTX101U KTX102E KTX102U KTX111T KTX201E KTX201F KTX201U KTX211E KTX211U KTX212E KTX212U KTX213E KTX213U KTX214E KTX214U KTX215E KTX215U KTX301E KTX301U KTX302U KTX303U KTX311T KTX312T KTX321U KTX401E KTX401U KTX402U KTX403U KTX411T KTX412T Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor SMOS FET SMOS FET JFET JFET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET SMOS FET JFET JFET JFET JFET JFET Transistor Transistor Transistor Transisto
KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. D H Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907AE. ) CHARACTERISTIC C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + H J 0.50 _ 0.05 0.13 + J C MAXIMUM RATING (Ta=25 DIM A B 1. EMITTER SYMBOL RATING UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Power Dissipation (Ta=25 ) PC 100 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 2. BASE 3. COLLECTOR ESM Marking ZG 2004. 1. 29 Revision No : 0 1/4 KTN2222AE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=60V, VEB(OFF)=3V - - 10 nA Collector Cut-off
KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. D H Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to KTN2907AE. ) CHARACTERISTIC C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + H J 0.50 _ 0.05 0.13 + J C MAXIMUM RATING (Ta=25 DIM A B 1. EMITTER SYMBOL RATING UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Power Dissipation (Ta=25 ) PC 100 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 2. BASE 3. COLLECTOR ESM Marking ZG 2004. 1. 29 Revision No : 0 1/4 KTN2222AE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=60V, VEB(OFF)=3V - - 10 nA Collector Cut-off Curr
KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B *Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. D H *Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. *Complementary to KTN2907AE. CHARACTERISTIC C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + H J 0.50 _ 0.05 0.13 + J C MAXIMUM RATING (Ta=25) DIM A B 1. EMITTER SYMBOL RATING UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Power Dissipation (Ta=25) PC 100 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range 2. BASE 3. COLLECTOR ESM Marking ZG 2004. 1. 29 Revision No : 0 1/4 KTN2222AE ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=60V, VEB(OFF)=3V - - 10 nA Collector Cut-off Curre
Diode KEC PG12GXTS6 TVS Diode KEC Z02W2.7V Zener Diode KEC KTN2222 Transistor KEC MMBZ5229B Zener Diode KEC PG2.8CUS23 TVS Diode KEC Z02W20V Zener Diode KEC KTN2222A Transistor KEC MMBZ5230B Zener Diode KEC PG22KSSMA TVS Diode KEC Z02W22V Zener Diode KEC KTN2222AE Transistor KEC MMBZ5231B Zener Diode KEC PG24BUS23 TVS Diode KEC Z02W24V Zener Diode KEC KTN2222AS Transistor KEC MMBZ5232B Zener Diode KEC PG24EBUSC TVS Diode KEC Z02W3.0V Zener Diode KEC KTN2222AU Transistor KEC MMBZ5233B Zener Diode KEC PG24EXUS6 TVS Diode KEC Z02W3.3V Zener Diode KEC KTN2222S Transistor KEC MMBZ5234B Zener Diode KEC PG24FAS23 TVS Diode KEC Z02W3.6V Zener Diode KEC KTN2222U Transistor KEC MMBZ5235B Zener Diode KEC PG24FBTS6 TVS Diode KEC Z02W3.9V Zener Diode KEC KTN2369 Transistor KEC MMBZ5236B Zener Diode KEC PG24FSUSC TVS Diode KEC Z02W4.3V Zener Diode KEC KTN2369A Transistor KEC MMBZ5237B Zener Diode KEC PG24FXTS6 TVS Diode KEC Z02W4.7V Zener Diode KEC KTN2369AS Transistor KEC MMBZ5238B Zener Diode KEC PG24JSSMA
R PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222AE. C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + H J 0.50 _ 0.05 0.13 + C J 1. EMITTER MAXIMUM RATING (Ta=25 ) CHARACTERISTIC 2. BASE SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Power Dissipation (Ta=25 ) PC 100 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 3. COLLECTOR ESM Marking ZH 2004. 1. 29 Revision No : 0 1/4 KTN2907AE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-0.5V - - -50 nA Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -10 nA V(BR)CB
Diode KEC PG12GXTS6 TVS Diode KEC Z02W2.7V Zener Diode KEC KTN2222 Transistor KEC MMBZ5229B Zener Diode KEC PG2.8CUS23 TVS Diode KEC Z02W20V Zener Diode KEC KTN2222A Transistor KEC MMBZ5230B Zener Diode KEC PG22KSSMA TVS Diode KEC Z02W22V Zener Diode KEC KTN2222AE Transistor KEC MMBZ5231B Zener Diode KEC PG24BUS23 TVS Diode KEC Z02W24V Zener Diode KEC KTN2222AS Transistor KEC MMBZ5232B Zener Diode KEC PG24EBUSC TVS Diode KEC Z02W3.0V Zener Diode KEC KTN2222AU Transistor KEC MMBZ5233B Zener Diode KEC PG24EXUS6 TVS Diode KEC Z02W3.3V Zener Diode KEC KTN2222S Transistor KEC MMBZ5234B Zener Diode KEC PG24FAS23 TVS Diode KEC Z02W3.6V Zener Diode KEC KTN2222U Transistor KEC MMBZ5235B Zener Diode KEC PG24FBTS6 TVS Diode KEC Z02W3.9V Zener Diode KEC KTN2369 Transistor KEC MMBZ5236B Zener Diode KEC PG24FSUSC TVS Diode KEC Z02W4.3V Zener Diode KEC KTN2369A Transistor KEC MMBZ5237B Zener Diode KEC PG24FXTS6 TVS Diode KEC Z02W4.7V Zener Diode KEC KTN2369AS Transistor KEC MMBZ5238B Zener Diode KEC PG24JSSMA
AL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES *Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. *Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. *Complementary to the KTN2222AE. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Power Dissipation (Ta=25) PC 100 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range 2004. 1. 29 Revision No : 0 1/4 KTN2907AE ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-0.5V - - -50 nA Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -10 nA V(BR)CBO IC=-10A, IE=0 -60 - - V V(BR)CEO IC=-10mA, IB=0 -60 - - V V(BR)EBO IE=-10A, IC=0 -5 - - V hFE(1) IC=-0.1mA, VCE=-10V 75 - - hFE(2) IC=-1.0mA, VCE=-10V 100 - - hFE(3) IC=-10mA, VCE=-1