L2N7002LT1G S-L2N7002LT1G Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. ESD Protected:1000V 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2N7002LT1G 702 3000/Tape&Reel L2N7002LT3G 702 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25C) Symbol Limits Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Parameter Drain Current ID - Continuous TC = 25C 115 75 TC = 100C - Pulsed (Note 1) mAdc IDM 800 VGS 20 Vdc VGSM 40 Vdc Symbol Limits Unit PD 225 mW 1.8 mW/C RJA 556 C/W TJ,Tstg -55+150 C Gate-Source Voltage - Continuous - Non-repetitive (tp50s) 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR-5 Board (Note 2) @ TA = 25C Derate above 25C Thermal Res
L2N7002LT1G N-Channel SOT-23 * 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 * ESD Protected:1000V CASE 318, STYLE 21 SOT- 23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Drain Current - Continuous TC = 25C (Note 1.) - Continuous TC = 100C (Note 1.) - Pulsed (Note 2.) ID ID mAdc IDM 115 75 800 VGS VGSM 20 40 Vdc Vpk Symbol Max Unit PD 225 1.8 mW mW/C Thermal Resistance, Junction to Ambient RJA 556 C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25C Derate above 25C PD 300 mW mW/C Thermal Resistance, Junction to Ambient RJA 417 C/W TJ, Tstg -55 to +150 C Simplified Schematic Gate Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) 1 3 THERMAL CHARACTERISTICS Junction and Storage Temperature 2.4 Source (Top View) MARKING DIAGRAM & PIN ASSIGNMENT 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pul
- 11 Polarity N-Channel N-Channel P-Channel N-Channel 3 Drain 3 1 Gate 2 Source * ESD Protect 1 Gate 1 Gate 2 Source 2 Source N-Channel P-Channel 2 1 Package LRK7002WT1G 2. SOT-23/ TO-236AB Surface Mount MOS FETs Device LBSS84LT1G LBSS123LT1G LBSS138LT1G L2N7002LT1G SRK7002LT1G* L2N7002SLT1G Device Marking PD SA J1 702 RK 703 VDSS (V) 50 100 50 60 60 60 ID Cont (mA) 100 170 200 115 115 115 3 Drain VGS(th) RDS(on) ax M () 10 6.0 3.5 7.5 7.5 2.5 ID (mA) 100 100 200 500 50 50 Min (V) 0.8 0.8 0.5 1.0 1.0 1.0 3 Drain Switching Time Max td(on) (V) (ns) 2.0 2.5 2.8 20 1.5 20 2.5 20 2.5 20 2.0 7 td(off) (ns) 16 40 20 40 30 11 Polarity P-Channel N-Channel N-Channel N-Channel N-Channel N-Channel 3 Drain 3 1 Gate 1 Gate 1 Gate 2 Source P-Channel * ESD Protect 2 Source 2 Source N-Channel SRK7002LT1G 141 2 1 Package Leshan Radio Company, Ltd. http//:www.lrc.cn 2.1 SOT-23/ TO-236AB Surface Mount MOS FETs Device LP2301LT1G LN2302LT1G LN2312LT1G LN2306LT1G LP2307LT1G LN4501LT1G VDSS (V) -20 20 20 20 -16 20 RDS(
Appecdix 1 Approved by: Raymond Wang Job Title: QA manager Copper wire conversion PCN Date: 2010-6-8 Page 1 of 3 LESHAN RADIO COMPANY, LTD. Appecdix 1 Affected Product list and Conversion Plan Affected Device list Affected Device list Affected Device list L2N7002LT1G L2N7002SLT1G SRK7002LT1G SSRK7002LT1G ME2N7002ELT1G ME2N7002DLT1G L2SK3019LT1G H2N7002KLT1G H2N7002LT1G 00 S G H2N7002SLT1G RK7002LT1G MN7002LT1G MF2N7002E-GLT1G CH2N7002ESLT1G LBSS123LT1G LBSS138LT1G LBSS84LT1G LNTR4003NLT1G LSBSS138LT1G LSI1012LT1G LSI1013LT1G MSS84LT1G MSK801LT1G NSK801LT1G L2SK801LT1G L1SS355T1G L1SS356T1G LBAS16HT1G LBAS20HT1G LBAS21HT1G LMDL6050T1G LMDL914T1G BR1SS355T1G LS1SS355T1G S1SS355T1G CS1SS355T1G H4148ST1G LBAT54HT1G LRB500V-40T1G LBZX84C10LT1G LBZX84C11LT1G LBZX84C12LT1G LBZX84C13LT1G LBZX84C15LT1G LBZX84C16LT1G LBZX84C18LT1G LBZX84C20LT1G LBZX84C22LT1G 8 C G LBZX84C24LT1G LBZX84C27LT1G LBZX84C2V4LT1G LBZX84C2V7LT1G LBZX84C30LT1G LBZX84C33LT1G LBZX84C36LT1G LBZX84C39LT1G LBZX84C3V0LT1G LBZX84C3V3LT1G
n a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 2 Gate Source 702 W = Device Code = Work Week ORDERING INFORMATION Device L2N7002LT1 L2N7002LT1G Marking Shipping 702 3000 Tape & Reel 702(Pb-Free) 3000 Tape & Reel L2N7002LT1-1/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 60 - - Vdc IDSS - - - - 1.0 500 Adc Gate-Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGS = -20 Vdc) IGSSR - - -100 nAdc VGS(th) 1.0 1.6 2.5 Vdc ID(on) 500 - - mA - - - - 3.75 0.375 - - - - 1.4 - 1.8 - 7.5 13.5 7.5 13.5 gFS 80 - - mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 17 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss - 10 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss - 2.5 5