mitter-base Voltage IC 0.6 Collector Current (DC) PC 0.625 * Collector Dissipation TJ 150 Junction Temperature Tstg -55~150 Voltage Unit V Pin : 1. Emitter 2. Base 3. Collector V V A ORDERING INFORMATION W Device Operating Temperature Package -20+85 TO-92 PJ2N5401CT Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25) Characteristic Symbol Test Condition Min Typ Max Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 130 V Collector- Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 120 V Emitter-Base Breakdown Voltage BVEBO IE=10A,IC=0 5 V Collector Cutoff Current ICBO VCB=200V,IE=0 Emitter Cutoff Current IEBO VEB=3V,Ic=0 DC Current Gain HEF1 VCE=10V,IC=1 mA 30 HEF2 VCE=10V,IC=10mA 40 HEF3 VCE=10V,IC=50mA 40 VCE(SAT) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance VBE(SAT) Cob 100 nA 50 nA Ic=10 mA,IB=1 mA 0.2 V Ic=50 mA,IB=5 mA 0.5 V Ic=10 mA,IB=1 mA 1 V Ic=50 mA,IB=5 mA 1 V VCB=20V,IE=0, f=1MHz 6 PF 400 MHz 8 dB Current Gain-Bandwidth product fT VCE=5V,Ic=10
ter VCEO 120 Voltage VEBO 5 Emitter-base Voltage IC 0.6 Collector Current (DC) PC 0.625 * Collector Dissipation TJ 150 Tstg -55~150 Junction Temperature Unit V P in : 1. Emitter 2. Base 3. Collector V V A ORDERING INFORMATION W Device Package -20+85 TO-92 PJ2N5401CT Storage Temperature Operating Temperature ELECTRICAL CHARACTERISTICS (Ta=25) Characteristic Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO Ic=100A,IE =0 130 V Collector- Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 120 V Emitter-Base Breakdown Voltage BVEBO IE =10A,IC=0 5 V Collector Cutoff Current ICBO VCB=200V,IE =0 Emitter Cutoff Current IEBO VEB=3V,Ic=0 DC Current Gain HEF1 VCE =10V,IC=1 mA 30 HEF2 VCE =10V,IC=10mA 40 HEF3 VCE =10V,IC=50mA 40 VCE(SAT) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance VBE(SAT) Cob 100 nA 50 nA Ic=10 mA,IB=1 mA 0.2 V Ic=50 mA,IB=5 mA 0.5 V Ic=10 mA,IB=1 mA 1 V Ic=50 mA,IB=5 mA 1 V VCB=20V,IE =0, f=1MHz 6 PF 400 MHz 8 dB Current Gain