Datasheet.Directory

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"500n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.6","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JAN1N5623US","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"500n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.6","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANS1N5623US","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"500n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.6","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANTX1N5623US","@I(R) (A) (Test Condition)":"1.0"...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"500n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.6","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANTXV1N5623US","@I(R) (A) (Test Condition)":"1.0...

{"Peak Rep Rev Volt":"1000(V)","Peak Non-Repetitive Surge Current":"30(A)","Peak Reverse Recovery Time":"500(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"1.6(V)","Peak Reverse Current":"0.5(uA)","Configuration":"Single","Pin Count":"2","Package Type":"A-MELF"}...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"500nA @ 1000V","Voltage - Forward (Vf) (Max) @ If":"1.6V @ 3A","Family":"Diodes, Rectifiers - Single","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"15pF @ 12V, 1MHz","Supplier Device Package":"D-5A","Reverse Recovery Time (trr)":"500ns","Datasheets":"1N5615US thru 1N5623US","Current - Average Rectified (Io)":"1A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b0C","Package / Case":"SQ-MEL...

{"Peak Rep Rev Volt":"1000(V)","Avg. Forward Curr (Max)":"1","Peak Non-Repetitive Surge Current":"30(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"500(ns)","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"1.6(V)","Packaging":"Bag","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"500(ns)","Package Type":"A-MELF","Peak Forward Voltage":"1.6(V)","Peak Non-Repetitive Surge Current (Max)":"30","Rev Curr":"0.5(uA)","P...

{"Category":"Rectifier","Peak Non-Repetitive Surge Current":"30 A","Description":"Value","Package":"2A-MELF","Peak Average Forward Current":"1@Ta=55C A","Mounting":"Surface Mount","Peak Reverse Current":"0.5 uA","Peak Reverse Recovery Time":"500 ns","Operating Temperature":"-65 to 175 \u00b0C","Peak Forward Voltage":"1.6@3A V","Peak Reverse Repetitive Voltage":"1000 V","Configuration":"Single","Type":"Switching Diode","Manufacturer":"Microsemi"}...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"500nA @ 1000V","Voltage - Forward (Vf) (Max) @ If":"1.6V @ 3A","Family":"Diodes, Rectifiers - Single","Standard Package":"100","Series":"Military, MIL-PRF-19500/429","Capacitance @ Vr, F":"15pF @ 12V, 1MHz","Supplier Device Package":"D-5A","Reverse Recovery Time (trr)":"500ns","Datasheets":"1N5615US thru 1N5623US","Current - Average Rectified (Io)":"1A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"500nA @ 1000V","Voltage - Forward (Vf) (Max) @ If":"1.6V @ 3A","Family":"Diodes, Rectifiers - Single","Standard Package":"100","Series":"Military, MIL-PRF-19500/429","Capacitance @ Vr, F":"15pF @ 12V, 1MHz","Supplier Device Package":"D-5A","Reverse Recovery Time (trr)":"500ns","Datasheets":"1N5615US thru 1N5623US","Current - Average Rectified (Io)":"1A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"500nA @ 1000V","Voltage - Forward (Vf) (Max) @ If":"1.6V @ 3A","Family":"Diodes, Rectifiers - Single","Standard Package":"100","Series":"Military, MIL-PRF-19500/429","Capacitance @ Vr, F":"15pF @ 12V, 1MHz","Supplier Device Package":"D-5A","Reverse Recovery Time (trr)":"500ns","Datasheets":"1N5615US thru 1N5623US","Current - Average Rectified (Io)":"1A","Operating Temperature - Junction":"-65\u00b0C ~ 175\u00b...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS PACKAGE-2","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"1000 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Number of Elements":"1","Case Connection":"ISOLATED","Terminal Position":"END","Diode Type":"SIGNAL DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","Reverse Re...