Did you mean: 2N3997J
Product Datasheet Search Results:
2 Pages, 213 KB, Original- 2N3997JTXV
- Api Electronics, Inc.
- Short form transistor data
2 Pages, 25 KB, Original- 2N3997JTXV
- New England Semiconductor
- NPN POWER SWITCHING SILICON TRANSISTOR
Product Details Search Results:
Microsemi.com/2N3997JANTX
{"Collector Current (DC) ":"5 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"5 A","Collector-Emitter Voltage":"80 V","Mounting":"Stud","Emitter-Base Voltage":"8 V","Category ":"Bipolar Power","DC Current Gain (Min)":"60","Operating Temperature Classification":"Military","Power Dissipation":"2 W","Operating Temp Range":"-55C to 125C","Package Type":"TO-111","Collector-Base Voltage":"100 V","Rad Hardened":"No","DC Current Gain":"60","Pin Count":"4"}...
1472 Bytes - 12:16:22, 14 November 2024
Semicoa.com/2N3997J
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor T...
1237 Bytes - 12:16:22, 14 November 2024
Semicoa.com/2N3997JV
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor T...
1241 Bytes - 12:16:22, 14 November 2024
Semicoa.com/2N3997JX
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor T...
1240 Bytes - 12:16:22, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPI076N12N3G.pdf | 0.56 | 1 | Request | |
| IPI147N12N3G.pdf | 0.75 | 1 | Request | |
| IPB038N12N3G.pdf | 0.49 | 1 | Request | |
| IFS75B12N3E4_B39.pdf | 0.48 | 1 | Request | |
| IPP076N12N3G.pdf | 0.56 | 1 | Request | |
| IPD110N12N3G.pdf | 0.75 | 1 | Request | |
| IPP147N12N3G.pdf | 0.75 | 1 | Request | |
| IPS110N12N3G.pdf | 0.75 | 1 | Request | |
| IFS75B12N3T4_B31.pdf | 0.31 | 1 | Request | |
| IPB036N12N3G.pdf | 0.62 | 1 | Request | |
| IPP114N12N3G.pdf | 0.51 | 1 | Request | |
| IFS150B12N3T4_B31.pdf | 0.29 | 1 | Request |
