Product Datasheet Search Results:
1 Pages, 30 KB, Original- 2N4296
- Central Semiconductor Corp.
- 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-66
1 Pages, 30 KB, Original- 2N4296LEADFREE
- Central Semiconductor Corp.
- 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-66
1 Pages, 85 KB, Original- 2N4296
- Diode Transistor Co., Inc.
- Transistor Short Form Data - TO-3
2 Pages, 184 KB, Scan- 2N4296
- General Transistor Corp.
- NPN Power Transistors
2 Pages, 152 KB, Original- 2N4296
- High Voltage Semi-conductor Specialists, Inc.
- Silicon Power Transistors
1 Pages, 71 KB, Scan- 2N4296
- Microsemi Corp.
- 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-66
1 Pages, 163 KB, Scan- 2N4296
- Semiconductor Technology, Inc.
- High Voltage Silicon Medium Power Transistors
Product Details Search Results:
Centralsemi.com/2N4296
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-66, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"20 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"250 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transisto...
1361 Bytes - 13:25:22, 27 March 2025
Centralsemi.com/2N4296LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"20 W","Collector Current-Max (IC)":"1 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"250 V","Transition Frequency-Nom (fT)":"20 MHz","Transistor Application":"SWITCHING","Cas...
1461 Bytes - 13:25:22, 27 March 2025
Microsemi.com/2N4296
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"50","Collector-emitter Voltage-Max":"250 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number ...
1216 Bytes - 13:25:22, 27 March 2025
Various/2N4296
RHE, 2N4296, Silicon, NPN, 20W, 350V, 250V, 4V, 1A, 200°C, 20MHz, 6, 50/150, KER, TO66...
522 Bytes - 13:25:22, 27 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ED2N4237X012EM1L.pdf | 0.03 | 1 | Request | |
| ED2N42371012L.pdf | 0.03 | 1 | Request | |
| ED2N42171012L.pdf | 0.03 | 1 | Request | |
| ED2N4217X113SWT.pdf | 0.03 | 1 | Request | |
| ED2N4217X012.pdf | 0.03 | 1 | Request | |
| ED2N42371222SWEM1LT2.pdf | 0.03 | 1 | Request | |
| ED2N42174113SWT.pdf | 0.03 | 1 | Request | |
| ED2N42571012.pdf | 0.03 | 1 | Request | |
| ED2N42174112.pdf | 0.03 | 1 | Request | |
| ED2N42572012.pdf | 0.03 | 1 | Request | |
| ED2N42591123.pdf | 0.03 | 1 | Request | |
| ED2N42571112.pdf | 0.03 | 1 | Request |
