Product Datasheet Search Results:
1 Pages, 97 KB, Original- 2N5307
- Advanced Semiconductor, Inc.
- 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-98
1 Pages, 6 KB, Original- 2N5307
- American Microsemiconductor, Inc.
- 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-98
4 Pages, 376 KB, Original- 2N5307
- Central Semiconductor
- SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY)
4 Pages, 48 KB, Original- 2N5307_D74Z
- Fairchild
- TRANSISTOR DARL NPN 40V TO-92 - 2N5307_D74Z
4 Pages, 131 KB, Scan- 2N5307
- General Electric Solid State
- Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA.
1 Pages, 648 KB, Scan- 2N5307
- General Electric
- Semiconductor Data Book 1971
1 Pages, 57 KB, Scan- 2N5307
- Micro Electronics Corporation
- 300 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
1 Pages, 70 KB, Original- 2N5307
- National Semiconductor
- NPN Darlington Transistor
5 Pages, 371 KB, Scan- 2N5307
- Vishay Presicion Group
- NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Product Details Search Results:
Advancedsemiconductor.com/2N5307
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"TO-98, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"2000","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Collector Current-Max (IC)":"0.3000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Te...
1260 Bytes - 12:35:17, 31 December 2024
Americanmicrosemi.com/2N5307
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","DC Current Gain-Min (hFE)":"2000","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.3000 A","Transition Frequency-Nom (fT)":"60 MHz","Transistor Polarity":"NPN"}...
1036 Bytes - 12:35:17, 31 December 2024
Fairchildsemi.com/2N5307
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1.2A","Frequency - Transition":"-","Transistor Type":"NPN - Darlington","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.4V @ 200\u00b5A, 200mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Voltage - Collector Emitter Breakdown (Max)":"40V","Power - Max":"625mW","Packaging":"Bulk","Datasheets":"2N5307","Current - Collector Cutof...
1593 Bytes - 12:35:17, 31 December 2024
Fairchildsemi.com/2N5307_D74Z
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1.2A","Frequency - Transition":"-","Transistor Type":"NPN - Darlington","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.4V @ 200\u00b5A, 200mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Voltage - Collector Emitter Breakdown (Max)":"40V","Power - Max":"625mW","Packaging":"Tape & Box (TB)","Datasheets":"2N5307","C...
1656 Bytes - 12:35:17, 31 December 2024
Microelectr.com.hk/2N5307
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.6000 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"2000","Collector-emitter Voltage-Max":"40 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Collector Current-Max (IC)":"0.3000 A","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"DARLINGTON","Packag...
1265 Bytes - 12:35:17, 31 December 2024
N_a/2N5307
{"Category":"Transistor, Darlington Transistor","Amps":"0.3A","MHz":">60 MHz","Volts":"40V"}...
537 Bytes - 12:35:17, 31 December 2024
Vishay.com/2N5307
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, CASE CZ, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"6000","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Number of Terminals":"3","Number ...
1198 Bytes - 12:35:17, 31 December 2024
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