Datasheet.Directory

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JAN2N6660","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain Cur...

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JANTX2N6660","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain C...

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"3.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JANTXV2N6660","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"60","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 1mA","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Current - Continuous Drain (Id) @ 25\u00b0C":"410mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"2N6660","PCN Assembly\/Origin":"3L TO-39 Qualification Assembly Site Update 22\/Aug\/2014 Additional Fabrication Site 03\/Sep\/2014 Fab Site Addition 14\/Aug\/2014","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","Datasheets":"2N6660","FET Type":"MOSFET N-Chan...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Surface Mount":"Yes","Mfr Pac...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HERMETIC SEALED PACKAGE-18","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.7000 W","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"1 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE SMALL...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Sur...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC4-15","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max":"3 ohm","Number of Terminals":"15","...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC4-15","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max":"3...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHIN...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHIN...

{"Category":"Power MOSFET","Dimensions":"9.39 x 9.01 x 4.58 mm","Maximum Continuous Drain Current":"\u00b11.1 A","Maximum Drain Source Voltage":"60 V","Package Type":"TO-205AF","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"10 ns","Channel Type":"N","Typical TurnOff Delay Time":"10 ns","Pin Count":"3","Forward Transconductance":"195 mS","Mounting Type":"Through Hole","...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"3 ohm","Feedback Cap-Max (Crss)":"35 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuratio...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4100 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Case Connection":"DRAIN","Mfr ...

{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4100 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","PCN Assembly\/Origin":"SIL-062-2014-Rev-0 30\/May\/2014","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6660(2)\/2N6660JANTX(V)","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"100","Drain ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6660(2)\/2N6660JANTX(V)","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"60V","Current - Continuous Drain...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","PCN Assembly\/Origin":"SIL-062-2014-Rev-0 30\/May\/2014","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6660(2)\/2N6660JANTX(V)","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"100","Drain ...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6660(2)\/2N6660JANTX(V)","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"60V","Current - Continuous Drain...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6660(2)\/2N6660JANTX(V)","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"60V","Current - Continuous Drain...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6660(2)\/2N6660JANTX(V)","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"60V","Current - Continuous Drain...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6660(2)\/2N6660JANTX(V)","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"60V","Current - Continuous Drain...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Supplier Device Package":"TO-39","Datasheets":"2N6660(2)\/2N6660JANTX(V)","Rds On (Max) @ Id, Vgs":"3 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"725mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"60V","Current - Continuous Drain...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7250 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9900 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7250 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9900 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":...