Product Datasheet Search Results:
8 Pages, 248 KB, Original- BSM150GB120DLC
- Infineon Technologies [eupec]
- BSM150GB120DLC
9 Pages, 136 KB, Original- BSM150GB120DN11
- Infineon Technologies [eupec]
- BSM150GB120DN11
11 Pages, 742 KB, Original- BSM150GB120DN2
- Eupec Power Semiconductors
- IGBT Power Module
9 Pages, 127 KB, Original- BSM150GB120DN2E3166
- Eupec Power Semiconductors
- TRANS IGBT MODULE N-CH 1200V 210A 7HALF-BRIDGE 2
9 Pages, 245 KB, Original- BSM150GB120DLC
- Infineon Technologies
- IGBT Modules 1200V 150A DUAL
11 Pages, 156 KB, Original- BSM150GB120DN2
- Infineon Technologies
- IGBT Modules 1200V 150A DUAL
11 Pages, 156 KB, Original- BSM150GB120DN2HOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 210A 1250000mW 7-Pin
8 Pages, 342 KB, Scan- BSM150GB120D
- Siemens Semiconductors
- IGBT Module
9 Pages, 131 KB, Original- BSM150GB120DN2
- Siemens Semiconductors
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
9 Pages, 132 KB, Original- BSM150GB120DN2E3166
- Siemens Semiconductors
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
Product Details Search Results:
Infineon.com/BSM150GB120D
{"Absolute Max. Power Diss. (W)":"1.2k","V(CE)sat Max.(V)":"2.8","V(BR)CES (V)":"1.0k","I(C) Abs.(A) Collector Current":"150","Package":"Module-s/q","Circuits Per Package":"1"}...
693 Bytes - 17:34:46, 29 March 2025
Infineon.com/BSM150GB120DLC
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"650 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"300 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"190 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Sha...
1365 Bytes - 17:34:46, 29 March 2025
Infineon.com/BSM150GB120DN2
{"Gate-Emitter Leakage Current":"320 nA","Continuous Collector Current at 25 C":"210 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"1.25 kW","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"Half Bridge2","Configuration":"Half Bridge",...
1580 Bytes - 17:34:46, 29 March 2025
Infineon.com/BSM150GB120DN2HOSA1
{"Collector Current (DC) ":"210(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Configuration":"Dual","Pin Count":"7"}...
1428 Bytes - 17:34:46, 29 March 2025
