Product Datasheet Search Results:
- BUK475-200A/B
- Philips Semiconductors / Nxp Semiconductors
- PowerMOS transistor
Product Details Search Results:
Nxp.com/BUK475-200A127
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200 V...
1465 Bytes - 00:29:05, 15 November 2024
Documentation and Support
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ZPT25BUK10-06-A10.pdf | 5.68 | 1 | Request | |
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