Product Datasheet Search Results:

FHX35LG/002.pdf4 Pages, 76 KB, Original
FHX35LG/002
Sumitomo Electric Industries, Ltd.
Si, N-CHANNEL, RF SMALL SIGNAL, JFET
FHX35LG/002.pdf4 Pages, 154 KB, Original
FHX35LG/002
Fujitsu Limited
Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
FHX35LG/002-E1.pdf4 Pages, 154 KB, Original
FHX35LG/002-E1
Fujitsu
FET: P Channel: ID 0.085 A

Product Details Search Results:

Eudyna.com/FHX35LG/002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"METAL CERAMIC, CASE LG, 4 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"DISK BUTTON","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"RADIAL","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configu...
1335 Bytes - 11:39:20, 17 November 2024
Fujitsu.com/FHX35LG/002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"METAL CERAMIC, CASE LG, 4 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.2900 W","Package Style":"DISK BUTTON","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"HIGH ELECTRON MOBILITY","Terminal Position":"UNSPECIFIED","Transistor Type":"RF ...
1349 Bytes - 11:39:20, 17 November 2024

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