Product Datasheet Search Results:
11 Pages, 501 KB, Original- IPB038N12N3G
- Infineon Technologies Ag
- 120 A, 120 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
12 Pages, 859 KB, Original- IPB038N12N3GATMA1
- Infineon Technologies
- MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
Product Details Search Results:
Infineon.com/IPB038N12N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"900 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0038 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"N-CHANNEL","F...
1613 Bytes - 22:35:49, 18 October 2024
Infineon.com/IPB038N12N3GATMA1
{"Product Category":"MOSFET","Series":"XPB038N12","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1127 Bytes - 22:35:49, 18 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPB038N12N3G.pdf | 0.49 | 1 | Request |
