Product Datasheet Search Results:
4 Pages, 118 KB, Scan- IRF353
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 15A, 350V/400V
4 Pages, 200 KB, Original- IRF353
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF353
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 192 KB, Scan- IRF353
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A.
2 Pages, 125 KB, Scan- IRF353
- General Electric
- Power Transistor Data Book 1985
4 Pages, 154 KB, Scan- IRF353
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 203 KB, Scan- IRF353R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 60 KB, Original- IRF353
- Intersil Corporation
- 13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ?, Avalanche Rated, N-Channel Power MOSFET FN1826.2
1 Pages, 42 KB, Original- IRF353
- International Rectifier
- TO-3 N-Channel Hexfet Power MOSFETS
1 Pages, 48 KB, Original- IRF353R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
12 Pages, 1094 KB, Original- IRF353
- Ixys Corporation
- High Voltage Power MOSFETs
1 Pages, 35 KB, Original- IRF353
- National Semiconductor
- N-Channel Power MOSFETs
5 Pages, 213 KB, Scan- IRF353
- Samsung Electronics
- N-CHANNEL POWER MOSFETS
Product Details Search Results:
Various/IRF353R
{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"150n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"52","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package...
1292 Bytes - 00:02:15, 20 September 2024
