Product Datasheet Search Results:

IRF423.pdf5 Pages, 158 KB, Scan
IRF423
Fairchild Semiconductor
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF423.pdf4 Pages, 200 KB, Original
IRF423.pdf4 Pages, 200 KB, Original
IRF423
Frederick Components
Power MOSFET Selection Guide
IRF423.pdf1 Pages, 38 KB, Scan
IRF423
Motorola
European Master Selection Guide 1986
IRF423.pdf5 Pages, 163 KB, Scan
IRF423
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A.
IRF423.pdf5 Pages, 174 KB, Scan
IRF423
Harris Semiconductor
Power MOSFET Data Book 1990
IRF423.pdf7 Pages, 49 KB, Original
IRF423
Intersil Corporation
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 ?, N-Channel Power MOSFETs
IRF423.pdf1 Pages, 42 KB, Original
IRF423
International Rectifier
TO-3 N-Channel Hexfet Power MOSFETS
IRF423.pdf3 Pages, 166 KB, Scan
IRF423
N/a
FET Data Book
IRF423.pdf5 Pages, 212 KB, Scan
IRF423
Samsung Electronics
N-CHANNEL POWER MOSFETS
IRF423.pdf4 Pages, 161 KB, Scan
IRF423
Siliconix
MOSPOWER Design Data Book 1983

Product Details Search Results:

Irf.com/IRF420
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"8 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source ...
1312 Bytes - 06:29:17, 17 November 2024

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