Product Datasheet Search Results:
11 Pages, 204 KB, Original- IRF630NS
- Fairchild Semiconductor
- N-Channel Power MOSFETs 200V, 9.3A, 0.30 Ohms
11 Pages, 337 KB, Original- IRF630NSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube
11 Pages, 337 KB, Original- IRF630NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 337 KB, Original- IRF630NSTRRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
12 Pages, 249 KB, Original- IRF630NS
- International Rectifier
- MOSFET N-CH 200V 9.3A D2PAK - IRF630NS
11 Pages, 337 KB, Original- IRF630NSPBF
- International Rectifier
- MOSFET N-CH 200V 9.3A D2PAK - IRF630NSPBF
11 Pages, 337 KB, Original- IRF630NSTRL
- International Rectifier
- MOSFET N-CH 200V 9.3A D2PAK - IRF630NSTRL
11 Pages, 337 KB, Original- IRF630NSTRLPBF
- International Rectifier
- MOSFET N-CH 200V 9.3A D2PAK - IRF630NSTRLPBF
12 Pages, 229 KB, Original- IRF630NSTRR
- International Rectifier
- MOSFET N-CH 200V 9.3A D2PAK - IRF630NSTRR
11 Pages, 337 KB, Original- IRF630NSTRRPBF
- International Rectifier
- MOSFET N-CH 200V 9.3A D2PAK - IRF630NSTRRPBF
2 Pages, 172 KB, Original- IRF630NS
- Transys Electronics
- Power MOSFET
Product Details Search Results:
Infineon.com/IRF630NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Rail/Tube","Power Dissipation":"82(W)","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1525 Bytes - 12:27:36, 14 November 2024
Infineon.com/IRF630NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"82(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1540 Bytes - 12:27:36, 14 November 2024
Infineon.com/IRF630NSTRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"82(W)","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1540 Bytes - 12:27:36, 14 November 2024
Irf.com/IRF630NS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"575pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"200","Supplier Device Package":"D2PAK","Datasheets":"IRF630N(S,L)","Rds On (Max) @ Id, Vgs":"300 mOhm @ 5.4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"82W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263A...
1605 Bytes - 12:27:36, 14 November 2024
Irf.com/IRF630NSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"9.3A (Tc)","Gate Charge (Qg) @ Vgs":"35nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"300 mOhm @ 5.4A, 10V","Datasheets":"IRF630N","...
1817 Bytes - 12:27:36, 14 November 2024
Irf.com/IRF630NSTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"9.3A (Tc)","Gate Charge (Qg) @ Vgs":"35nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"300 mOhm @ 5.4A, 10V","Datasheets":"IRF630N","...
2015 Bytes - 12:27:36, 14 November 2024
Irf.com/IRF630NSTRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF630N(S,L)","Rds On (Max) @ Id, Vgs":"300 mOhm @ 5.4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"82W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount",...
1615 Bytes - 12:27:36, 14 November 2024
Irf.com/IRF630NSTRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"9.3A (Tc)","Gate Charge (Qg) @ Vgs":"35nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"300 mOhm @ 5.4A, 10V","Datasheets":"IRF630N","...
1827 Bytes - 12:27:36, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF630NS.pdf | 0.24 | 1 | Request |
