Product Datasheet Search Results:
12 Pages, 246 KB, Original- IRF640NSTRLHR
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A Automotive 3-Pin(2+Tab) D2PAK T/R
11 Pages, 338 KB, Original- IRF640NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
12 Pages, 246 KB, Original- IRF640NSTRRHR
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A Automotive 3-Pin(2+Tab) D2PAK
11 Pages, 338 KB, Original- IRF640NSTRRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 163 KB, Original- IRF640NSTR
- International Rectifier
- N-channel power MOSFET for fast switching applications, 200V, 18A
11 Pages, 338 KB, Original- IRF640NSTRL
- International Rectifier
- 18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
12 Pages, 246 KB, Original- IRF640NSTRLHR
- International Rectifier
- Trans MOSFET N-CH Si 200V 18A Automotive 3-Pin(2+Tab) D2PAK T/R
11 Pages, 338 KB, Original- IRF640NSTRLPBF
- International Rectifier
- MOSFET N-CH 200V 18A D2PAK - IRF640NSTRLPBF
11 Pages, 338 KB, Original- IRF640NSTRR
- International Rectifier
- MOSFET N-CH 200V 18A D2PAK - IRF640NSTRR
12 Pages, 246 KB, Original- IRF640NSTRRHR
- International Rectifier
- Trans MOSFET N-CH Si 200V 18A Automotive 3-Pin(2+Tab) D2PAK
11 Pages, 338 KB, Original- IRF640NSTRRPBF
- International Rectifier
- MOSFET N-CH 200V 18A D2PAK - IRF640NSTRRPBF
Product Details Search Results:
Infineon.com/IRF640NSTRLHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1525 Bytes - 00:40:34, 15 November 2024
Infineon.com/IRF640NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1538 Bytes - 00:40:34, 15 November 2024
Infineon.com/IRF640NSTRRHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1521 Bytes - 00:40:34, 15 November 2024
Infineon.com/IRF640NSTRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1539 Bytes - 00:40:34, 15 November 2024
Irf.com/IRF640NSTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"247 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1538 Bytes - 00:40:34, 15 November 2024
Irf.com/IRF640NSTRLHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"200(V)","Frequency (Max)":"Not Required MHz","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain "...
1722 Bytes - 00:40:34, 15 November 2024
Irf.com/IRF640NSTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, ...
2155 Bytes - 00:40:34, 15 November 2024
Irf.com/IRF640NSTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"247 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1540 Bytes - 00:40:34, 15 November 2024
Irf.com/IRF640NSTRRHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1511 Bytes - 00:40:34, 15 November 2024
Irf.com/IRF640NSTRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, ...
2135 Bytes - 00:40:34, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF640NS.pdf | 0.24 | 1 | Request |
