Product Datasheet Search Results:
6 Pages, 176 KB, Scan- IRF830STRR
- International Rectifier
- HEXFET Power MOSFET
1 Pages, 44 KB, Original- IRF830STRR
- N/a
- Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
10 Pages, 204 KB, Original- IRF830STRR
- Vishay [siliconix]
- MOSFET N-CH 500V 4.5A D2PAK - IRF830STRR
10 Pages, 329 KB, Original- IRF830STRRPBF
- Vishay Presicion Group
- 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Vishay.com/IRF830STRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF830S","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 2.7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain to Source...
1552 Bytes - 11:58:28, 14 November 2024
Vishay.com/IRF830STRRPBF
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Techn...
1588 Bytes - 11:58:28, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF8313.pdf | 0.25 | 1 | Request |
