Product Datasheet Search Results:
- IRF841
- Fairchild Semiconductor Corporation
- 8 A, 450 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
- IRF841
- Fci Semiconductor
- POWER MOSFETs
- IRF841
- Frederick Components
- Power MOSFET Selection Guide
- IRF841
- Motorola / Freescale Semiconductor
- N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
- IRF841
- General Electric
- Power Transistor Data Book 1985
- IRF841
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF841R
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF841
- International Rectifier
- N-Channel Power MOSFETs
- IRF841R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Fairchildsemi.com/IRF841
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"510 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENE...
1436 Bytes - 06:48:25, 17 November 2024
Semelab.co.uk/IRF841
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Res...
1299 Bytes - 06:48:25, 17 November 2024
St.com/IRF841
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET T...
1492 Bytes - 06:48:25, 17 November 2024
St.com/IRF841FI
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET...
1539 Bytes - 06:48:25, 17 November 2024
Various/IRF841R
{"C(iss) Max. (F)":"1.2n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"7.4","I(D) Abs. Max.(A) Drain Curr.":"5.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"74n","r(DS)on Max. (Ohms)":"850m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"4.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pac...
1297 Bytes - 06:48:25, 17 November 2024
Documentation and Support
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