Product Datasheet Search Results:

IRF841.pdf1 Pages, 45 KB, Scan
IRF841
Fairchild Semiconductor Corporation
8 A, 450 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
IRF841.pdf4 Pages, 200 KB, Original
IRF841.pdf4 Pages, 200 KB, Original
IRF841
Frederick Components
Power MOSFET Selection Guide
IRF841.pdf2 Pages, 148 KB, Scan
IRF841
Motorola / Freescale Semiconductor
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
IRF841.pdf2 Pages, 131 KB, Scan
IRF841
General Electric
Power Transistor Data Book 1985
IRF841.pdf5 Pages, 200 KB, Scan
IRF841
Harris Semiconductor
Power MOSFET Data Book 1990
IRF841R.pdf5 Pages, 196 KB, Scan
IRF841R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF841.pdf1 Pages, 34 KB, Original
IRF841R.pdf1 Pages, 48 KB, Original
IRF841R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRF841.pdf4 Pages, 225 KB, Scan
IRF841
N/a
FET Data Book
IRF841FI.pdf1 Pages, 85 KB, Scan
IRF841FI
N/a
Shortform Datasheet & Cross References Data
IRF841R.pdf1 Pages, 85 KB, Scan
IRF841R
N/a
Shortform Datasheet & Cross References Data

Product Details Search Results:

Fairchildsemi.com/IRF841
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"510 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENE...
1436 Bytes - 06:48:25, 17 November 2024
Semelab.co.uk/IRF841
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Res...
1299 Bytes - 06:48:25, 17 November 2024
St.com/IRF841
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET T...
1492 Bytes - 06:48:25, 17 November 2024
St.com/IRF841FI
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET...
1539 Bytes - 06:48:25, 17 November 2024
Various/IRF841R
{"C(iss) Max. (F)":"1.2n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"7.4","I(D) Abs. Max.(A) Drain Curr.":"5.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"74n","r(DS)on Max. (Ohms)":"850m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"4.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pac...
1297 Bytes - 06:48:25, 17 November 2024

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