Product Datasheet Search Results:
5 Pages, 59 KB, Original- IRFP32N50KS
- International Rectifier
- HEXFET Power MOSFET
8 Pages, 114 KB, Original- IRFP32N50KS
- Vishay Presicion Group
- 32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
8 Pages, 114 KB, Original- IRFP32N50KSPBF
- Vishay Presicion Group
- 32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Vishay.com/IRFP32N50KS
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"130 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1525 Bytes - 13:32:05, 01 November 2024
Vishay.com/IRFP32N50KSPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"130 A","Channel Type":"N-CHANNEL","FE...
1588 Bytes - 13:32:05, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRFP3206.pdf | 0.29 | 1 | Request |
