Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"15(W)","Continuous Drain Current":"3.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"68 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"68 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL P...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"7 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power \/ Military MOSFETs","Package \/ Case":"TO-205AF Metal Can","Current - Continuous Drain (Id) @ 25\u00b0C":"3.5A (Tc)","Gate Charge (Qg) @ Vgs":"8.1nC @ 10V","Product Photos":"JANTX2N6782","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","Datasheets":"2N6782,84,86","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vds...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power \/ Military MOSFETs","Package \/ Case":"18-BQFN Exposed Pad","Current - Continuous Drain (Id) @ 25\u00b0C":"3.5A (Tc)","Gate Charge (Qg) @ Vgs":"8.1nC @ 10V","Product Photos":"JANTX2N6782U, JANTX2N6849U","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","Datasheets":"2N6782U,84U,86U","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to ...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...