Product Datasheet Search Results:

IRFP32N50.pdf8 Pages, 93 KB, Original
IRFP32N50
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
IRFP32N50K.pdf8 Pages, 93 KB, Original
IRFP32N50KPBF.pdf8 Pages, 93 KB, Original
IRFP32N50KPBF
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP32N50KS.pdf5 Pages, 59 KB, Original
IRFP32N50K.pdf9 Pages, 178 KB, Original
IRFP32N50K
Vishay [siliconix]
MOSFET N-CH 500V 32A TO-247AC - IRFP32N50K
IRFP32N50KPBF.pdf9 Pages, 178 KB, Original
IRFP32N50KPBF
Vishay [siliconix]
MOSFET N-CH 500V 32A TO-247AC - IRFP32N50KPBF
IRFP32N50KS.pdf8 Pages, 114 KB, Original
IRFP32N50KS
Vishay Presicion Group
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP32N50KSPBF.pdf8 Pages, 114 KB, Original
IRFP32N50KSPBF
Vishay Presicion Group
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Siliconix_vishay/IRFP32N50KPBF
811 Bytes - 13:41:10, 01 November 2024
Vishay.com/IRFP32N50K
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"5280pF @ 25V","Series":"-","Standard Package":"500","PCN Design/Specification":"SIL-0612014-Rev-0 04/Apr/2014","Datasheets":"IRFP32N50K","Rds On (Max) @ Id, Vgs":"160 mOhm @ 32A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"460W","Mounting Type":"Through Hole","Package / Case":...
1594 Bytes - 13:41:10, 01 November 2024
Vishay.com/IRFP32N50KPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"32A (Tc)","Gate Charge (Qg) @ Vgs":"190nC @ 10V","Product Photos":"TO-247-3","PCN Design/Specification":"SIL-0612014-Rev-0 04/Apr/2014","Rds On (Max) @ Id, Vgs":"160 mOhm @ 32A, 10V","Datasheets":"IRFP32N50K","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Packag...
1832 Bytes - 13:41:10, 01 November 2024
Vishay.com/IRFP32N50KS
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"130 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1525 Bytes - 13:41:10, 01 November 2024
Vishay.com/IRFP32N50KSPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"130 A","Channel Type":"N-CHANNEL","FE...
1588 Bytes - 13:41:10, 01 November 2024

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